Semiconductor Device With Oxide Transistors For Manufacturing Efficiency
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Solution Overview
Problem
The existing manufacturing methods for semiconductor devices with transistors having different electrical characteristics require a drastic increase in manufacturing steps, leading to decreased yield and producibility, as each transistor needs to be separately manufactured.
Innovation Solution
A semiconductor device design where transistors with different electrical characteristics are integrated on the same layer using a specific structure and materials, such as metal oxides with varying bandgaps, allowing for the formation of transistors with distinct threshold voltages without a significant increase in manufacturing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If separate manufacturing processes are used for transistors with different electrical characteristics, then transistor performance differentiation is achieved, but manufacturing complexity and steps increase drastically
Solution Approach 1:
The patent applies local quality by forming a semiconductor layer with a first conductivity type in a first region and a semiconductor layer with a second conductivity type in a second region on the same substrate. This allows different electrical characteristics (n-type and p-type) to be achieved in different locations without requiring separate manufacturing processes, thereby resolving the contradiction between transistor performance differentiation and manufacturing complexity.
2Adaptability or versatility
If separate manufacturing processes are used for transistors with different electrical characteristics, then transistor performance differentiation is achieved, but production efficiency decreases
Solution Approach 1:
The patent merges the manufacturing processes for n-type and p-type transistors into a single integrated process. By forming both conductivity types simultaneously on the same substrate using the same manufacturing steps, the patent eliminates the need for separate production lines, thereby maintaining transistor performance differentiation while significantly improving production efficiency.
3Reliability
If oxide semiconductor layers with different electron affinities are stacked, then carrier mobility increases, but device structure complexity increases
Solution Approach 1:
The patent applies local quality by assigning different conductivity types (n-type and p-type) to different regions of the semiconductor layer based on local doping requirements. This approach achieves the necessary electrical characteristics for high carrier mobility without requiring complex stacked oxide semiconductor layers, thereby resolving the contradiction between reliability and device structure complexity.
Data Source
AI summary
A semiconductor device having favorable reliability which is capable of retaining data for a long time is provided. The semiconductor device includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide over the first gate insulator, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide, the first conductor, and the second conductor, a second gate insulator over the fourth oxide, and a second gate electrode over the second gate insulator. The first conductor is in contact with a top surface of the second oxide, a side surface of the second oxide that faces the third oxide, and part of a top surface of the first oxide. The second conductor is in contact with a top surface of the third oxide, a side surface of the third oxide that faces the second oxide, and part of the top surface of the first oxide. The fourth oxide is in contact with part of the top surface of the first oxide between the first conductor and the second conductor.