Oxide Transistor Stack for Short-Channel Display Backplanes
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving transistors with a minute size, short channel length, high on-state current, favorable electrical characteristics, reduced area occupation, low power consumption, and high reliability, while also requiring high-definition display capabilities and efficient manufacturing processes.
Innovation Solution
The semiconductor device incorporates a first and second transistor, with a metal oxide layer and conductive layers, surrounded by insulating layers containing oxygen and nitrogen, which enhance contact and reduce oxygen vacancies, allowing for high on-state current and low power consumption, and includes a nitrogen-rich insulating layer to stabilize electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If transistor size is reduced to increase pixel density and aperture ratio, then definition and aperture ratio are improved, but manufacturing precision and reliability become more difficult to maintain
Solution Approach 1:
The patent transitions from planar transistor architecture to a three-dimensional vertical channel structure. The channel extends in the thickness direction rather than laterally, allowing miniaturization of the transistor footprint while maintaining channel length through vertical stacking of semiconductor layers and insulating films.
Solution Approach 2:
The patent employs a composite structure combining semiconductor layers (first and second semiconductor layers) with multiple insulating films having different functions. The first insulating film provides electrical isolation, the second insulating film provides mechanical support and protection, and the metal oxide layer enhances contact properties. This composite approach enables precise control of electrical characteristics in miniaturized devices.
2Length of moving object
If channel length is shortened to reduce transistor area, then pixel size is reduced and definition is increased, but on-state current and electrical characteristics become harder to maintain
Solution Approach 1:
The channel length is effectively extended in the vertical dimension while the lateral footprint is reduced. The first semiconductor layer and second semiconductor layer are stacked vertically with the channel extending through the thickness direction, allowing short channel length in the lateral direction while maintaining adequate channel length for current flow through the vertical path.
Solution Approach 2:
The patent introduces a metal oxide layer at specific locations where contact is made between electrodes and the semiconductor channel. This local modification enhances the contact properties and reduces contact resistance, thereby maintaining high on-state current even with shortened channel length. The insulating films are also strategically positioned to provide localized electrical isolation and protection.
3Area of moving object
If transistor area is reduced to increase aperture ratio, then display definition is improved, but electrical characteristics and reliability become more challenging to maintain
Solution Approach 1:
The patent uses a composite structure with multiple insulating films and metal oxide layers to maintain electrical characteristics in miniaturized transistors. The first insulating film provides electrical isolation between conductive layers, the second insulating film provides mechanical protection and additional isolation, and the metal oxide layer enhances contact properties. This multi-layer composite structure ensures stable electrical characteristics and high reliability despite reduced transistor area.
Solution Approach 2:
The metal oxide layer acts as an intermediary between the conductive layers and the semiconductor channel, improving contact properties and reducing contact resistance. The insulating films serve as intermediaries to provide electrical isolation and mechanical protection, thereby maintaining reliable electrical characteristics in the miniaturized transistor structure.
4Power
If oxygen vacancies are reduced to improve electrical characteristics, then on-state current is increased and power consumption is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent incorporates oxygen-containing insulating films and metal oxide layers during the manufacturing process to prevent oxygen vacancies from forming in the semiconductor layers. By preparing the structure in advance with these oxygen-rich materials in position, the formation of oxygen vacancies is prevented during subsequent processing steps, thereby reducing power consumption without requiring complex post-processing treatments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables transistors with a minute size and short channel length, providing high on-state current, low power consumption, and improved reliability, while occupying a small area and facilitating high-definition displays with efficient manufacturing.
Implementation Method 1
the first insulating layer contains oxygen. the second insulating layer contains nitrogen
Implementation Method 2
the second insulating layer contains nitrogen... a second insulating layer containing nitrogen, which enhances contact and reduces oxygen vacancies
Data Source
AI summary
A semiconductor device that occupies a small area is provided. The semiconductor device includes a first transistor, a second transistor, a first insulating layer, and a second insulating layer. The first transistor includes a metal oxide layer and a first conductive layer. The first insulating layer is provided over the first conductive layer. The second insulating layer is provided over the first insulating layer. The first insulating layer and the second insulating layer have an opening reaching the first conductive layer. The metal oxide layer is in contact with a top surface of the first conductive layer, a side surface of the first insulating layer, and a top surface and a side surface of the second insulating layer. The first insulating layer contains oxygen. The second insulating layer contains nitrogen. The metal oxide layer includes a region in contact with the second insulating layer and in contact with any one of a gate, a source, and a drain of the second transistor.