Oxide Semiconductor Transistor Structure for Stable Characteristics
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Solution Overview
Problem
Existing semiconductor devices face challenges with variations in transistor electrical characteristics, reliability issues, and difficulties in miniaturization and integration, along with high power consumption.
Innovation Solution
A semiconductor device design featuring distinct regions with controlled oxygen content and insulator structures, including a first and second region with varying oxygen amounts, and a method involving heat treatments and oxygen implantation to stabilize transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor density is increased to achieve higher integration, then productivity and device capability are improved, but variation in electrical characteristics and reliability deteriorate
Solution Approach 1:
The patent applies local quality by creating distinct first and second regions with different oxygen concentrations. The first region has higher oxygen content to suppress hydrogen entry and maintain stable transistor characteristics, while the second region has lower oxygen content. This spatial differentiation of oxygen distribution allows high transistor density in the second region without compromising the reliability of transistors in the first region.
Solution Approach 2:
The patent implements preliminary action by performing oxygen implantation into the first region before completing transistor fabrication. This pre-establishes a hydrogen barrier in the first region, preventing hydrogen from entering transistors during subsequent processing steps. The oxygen is implanted at a concentration of 1×10^19 to 1×10^21 atoms/cm³ to create this protective barrier in advance.
2Use of energy by moving object
If oxide semiconductor transistors are used to reduce power consumption, then energy efficiency is improved, but hydrogen entry causing threshold voltage shift remains a problem
Solution Approach 1:
The patent applies preliminary anti-action by implanting oxygen into the first region before hydrogen can enter the transistor channels. This creates a hydrogen barrier that actively prevents the harmful effect of hydrogen entry. The oxygen concentration is controlled at 1×10^19 to 1×10^21 atoms/cm³ to provide sufficient protection while maintaining the low-power characteristics of oxide semiconductor transistors.
3Productivity
If miniaturization is pursued to reduce device size, then productivity is improved, but manufacturing precision and characteristic control become more difficult
Solution Approach 1:
The patent maintains manufacturing precision during miniaturization by implementing local quality control through region-specific oxygen implantation. The first region receives oxygen treatment to establish hydrogen barriers, while the second region maintains lower oxygen content. This localized approach allows precise control of transistor characteristics even as overall device size decreases and transistor density increases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design provides a semiconductor device with stable transistor characteristics, improved reliability, high on-state current, and reduced power consumption, enabling miniaturization and high integration.
Implementation Method 1
an insulator layer which supplies oxygen to the oxide semiconductor layer
Implementation Method 2
a method involving heat treatments and oxygen implantation to stabilize transistor characteristics
Implementation Method 3
oxygen implantation to stabilize transistor characteristics
Data Source
AI summary
A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.