Oxide Semiconductor Transistor Layout for Stable Low-Power Switching
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving small variation in transistor characteristics, favorable reliability, high on-state current, miniaturization, and low power consumption, particularly with oxide semiconductor materials.
Innovation Solution
A transistor design incorporating an oxide semiconductor film with a gate electrode overlapping a region between the source and drain electrodes, featuring compressive stress in the source and drain electrodes and a barrier insulating film containing silicon nitride, along with a specific layer structure to control hydrogen concentration and oxygen vacancies, enhancing carrier concentration and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If oxide semiconductor material is used in transistor, then power consumption is reduced due to low leakage current, but variation in transistor characteristics increases
Solution Approach 1:
The patent applies local quality by creating distinct regions within the oxide semiconductor layer with different hydrogen concentrations. The source and drain regions have higher hydrogen concentration to increase carrier concentration and reduce resistance, while the channel region maintains lower hydrogen concentration to preserve low leakage current characteristics. This spatial differentiation of material properties resolves the contradiction between low power consumption and characteristic variation.
Solution Approach 2:
The patent changes the hydrogen concentration parameter selectively in different regions of the oxide semiconductor layer. By controlling hydrogen concentration to be higher in source/drain regions and lower in the channel region, the patent optimizes both the on-state current (reducing power consumption) and the threshold voltage stability (reducing characteristic variation).
2Productivity
If transistor size is reduced for miniaturization, then integration density increases, but on-state current decreases
Solution Approach 1:
The patent changes the carrier concentration parameter in the source and drain regions by introducing hydrogen, which increases the on-state current without requiring larger device dimensions. This allows miniaturization while maintaining sufficient drive current through material property optimization rather than geometric scaling.
3Power
If hydrogen concentration is increased in oxide semiconductor, then carrier concentration increases improving on-state current, but oxygen vacancies increase creating defects
Solution Approach 1:
The patent applies local quality by restricting high hydrogen concentration to specific source and drain regions while maintaining low hydrogen concentration in the channel region. This spatial separation allows the source/drain regions to have high carrier concentration for low resistance contacts, while the channel region maintains low defect concentration for reliable transistor operation.
Solution Approach 2:
The patent segments the oxide semiconductor layer into functionally distinct regions: source/drain regions with high hydrogen concentration for carrier generation, and channel region with low hydrogen concentration for stable threshold voltage. This segmentation allows each region to be optimized for its specific function without compromising the other.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves a semiconductor device with stable and consistent transistor characteristics, improved reliability, high on-state current, and low power consumption, enabling miniaturization and high integration while maintaining electrical performance.
Implementation Method 1
the source electrode and the drain electrode have compressive stress
Implementation Method 2
When tensile distortion is formed in a source region and a drain region in an oxide semiconductor film by a source electrode and a drain electrode that have compressive stress
Implementation Method 3
a barrier insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode; the barrier insulating film contains silicon nitride
Data Source
AI summary
A semiconductor device with a small variation in transistor characteristics is provided. An oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the oxide semiconductor film are included; an opening is formed overlapping with a region between the source electrode and the drain electrode in the interlayer insulating film; the gate electrode is placed in the opening in the interlayer insulating film; and the source electrode and the drain electrode include a conductive film having compressive stress.