Oxide Semiconductor Transistor Layout to Prevent Step Disconnection
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Solution Overview
Problem
Conventional display device configurations, such as those described in PTL 1, face challenges in improving transistor characteristics.
Innovation Solution
The display device incorporates a substrate with a first transistor, featuring a first and second electrode spaced apart, an insulating layer with an application-type material in the gap between the electrodes, and an oxide semiconductor layer acting as the transistor channel, in contact with the upper surface of the insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an oxide semiconductor layer is formed to fill a gap between electrodes in a conventional configuration, then the transistor structure is completed, but transistor characteristics cannot be improved and step disconnection may occur
Solution Approach 1:
An insulating layer is introduced as an intermediary between the electrodes and the oxide semiconductor layer. This insulating layer fills the gap between the electrodes and provides a flat upper surface that contacts the oxide semiconductor layer, preventing step disconnection while maintaining proper transistor structure and improving transistor characteristics.
Solution Approach 2:
The insulating layer is positioned in the vertical dimension between the electrode gap and the oxide semiconductor layer, creating a new structural layer that resolves the step disconnection issue by eliminating the height difference (step) that causes manufacturing precision problems.
2Shape
If electrodes are spaced apart with a gap to form a transistor structure, then the transistor geometry is established, but the gap causes step disconnection in the oxide semiconductor layer
Solution Approach 1:
The insulating layer serves as a mediator that fills the gap between the spaced electrodes, providing continuous support for the oxide semiconductor layer and preventing step disconnection while preserving the necessary electrode spacing for transistor operation.
Solution Approach 2:
The insulating layer is specifically placed only in the gap region between the electrodes, providing localized filling and support where needed, while allowing the electrodes to maintain their spaced geometry for proper transistor function.
Data Source
AI summary
A display device includes an insulating layer located in a gap between a first electrode and a second electrode and including an application-type insulating material, and an oxide semiconductor layer, at least a portion of which functions as a channel of a first transistor. The oxide semiconductor layer is in contact with the upper surface of the insulating layer.