Oxide Semiconductor Transistor Structure With Substrate Heat Dissipation
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Solution Overview
Problem
Oxide semiconductors like In--Ga--Zn-based oxide (IGZO) have low thermal conductivity, leading to accumulation of self-generated heat in transistors, which causes variations in electrical characteristics and element degradation.
Innovation Solution
A semiconductor device with a novel structure that includes a silicon substrate and a device above it, featuring a transistor with a metal oxide in the channel formation region, and conductors connected to the drain and silicon substrate through openings, allowing heat to be dissipated effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If oxide semiconductor is used in transistor channel formation region, then transistor can be operated at high current, but self-generated heat accumulates due to low thermal conductivity
Solution Approach 1:
The patent extracts the heat dissipation function from the transistor structure by introducing a separate conductor layer that extends to the substrate. This conductor acts as a dedicated heat extraction path, separating the electrical function (transistor operation) from the thermal management function (heat dissipation), thereby allowing high current operation without heat accumulation
Solution Approach 2:
The patent introduces a conductor layer as an intermediary element between the transistor and the substrate. This conductor serves as a thermal mediator that transfers heat away from the transistor channel region, enabling the transistor to maintain operational temperature even at high current levels
2Reliability
If self-generated heat accumulates in transistor, then electrical characteristics vary and element degradation occurs, but conventional structures lack effective heat dissipation paths
Solution Approach 1:
The conductor layer performs multiple functions simultaneously: it serves as an electrical connection element and as a heat dissipation path. By making the conductor extend to the substrate, the structure achieves both electrical connectivity and thermal management without adding separate dedicated components, thus improving reliability while controlling complexity
Solution Approach 2:
The patent merges the heat dissipation function with the existing conductor structure. Instead of adding a separate heat sink or thermal management component, the conductor is extended to the substrate to serve dual purposes: electrical connection and heat extraction, thereby maintaining structural simplicity while improving reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively reduces the influence of self-generated heat on transistor electrical characteristics and reliability, enhancing the overall performance and reliability of the semiconductor device.
Implementation Method 1
the conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device
Data Source
AI summary
A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.