Oxide Semiconductor Transistor Structure for Oxygen Vacancy Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices and memory devices face challenges in maintaining uniform oxygen vacancy distribution and electric field intensity in oxide semiconductors, leading to impaired current supply and cutoff capabilities in transistors.
Innovation Solution
The implementation of a specific insulator structure and annealing treatment in the transistor design, which includes a passage for uniform oxygen distribution and higher concentration of metallic elements with strong oxygen-bonding energy, such as gallium, to control oxygen vacancies and resistivity within the semiconductor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional oxide semiconductor structures are used, then device fabrication is simpler, but oxygen vacancy distribution becomes non-uniform leading to impaired transistor performance
Solution Approach 1:
The patent applies local quality by creating a non-uniform concentration distribution of metallic elements (In, Ga, Zn) within the oxide semiconductor layer. Specifically, the concentration of these elements varies across different regions of the semiconductor, with higher concentrations in certain areas and lower concentrations in others. This localized variation in composition enables different regions to have tailored properties for controlling oxygen vacancy distribution and electric field intensity, thereby improving transistor performance without requiring complex fabrication processes
Solution Approach 2:
The patent employs parameter changes by modifying the concentration of metallic elements (In, Ga, Zn) as a key compositional parameter within the oxide semiconductor. By adjusting these concentration parameters during fabrication, the invention achieves uniform oxygen vacancy distribution and controlled electric field intensity. The concentration values are specifically optimized to balance transistor performance metrics such as current supply capability and cutoff characteristics
2Reliability
If uniform oxygen vacancy distribution is achieved, then current supply capability improves, but device structure becomes more complex
Solution Approach 1:
The patent uses an insulator layer as an intermediary element between the oxide semiconductor and other device components. This insulator serves multiple functions: it facilitates uniform oxygen vacancy distribution in the semiconductor, helps control electric field intensity, and maintains structural integrity. By introducing this intermediary layer with specific properties, the invention achieves improved current supply capability while managing overall device complexity through a well-defined structural addition
3Reliability
If electric field intensity is increased, then transistor cutoff capability improves, but leak current increases
Solution Approach 1:
The patent applies local quality by creating spatially varying concentrations of metallic elements (In, Ga, Zn) in the oxide semiconductor, which results in localized control of electric field intensity. High-field regions are created where needed for effective cutoff, while low-field regions maintain lower leak currents. This non-uniform concentration distribution enables the device to achieve good cutoff capability without suffering from excessive leak current throughout the entire structure
Solution Approach 2:
The patent employs parameter changes by optimizing the concentration of metallic elements (In, Ga, Zn) to control the balance between electric field intensity and leak current. By adjusting these compositional parameters, the invention achieves sufficient electric field for cutoff capability in critical regions while maintaining lower field intensity in other regions to minimize leak current. The concentration parameters are specifically tuned to optimize this trade-off
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances current supply and cutoff capabilities by ensuring uniform oxygen vacancy distribution and suppressing leak currents, thereby improving transistor performance.
Implementation Method 1
annealing treatment in the transistor design, which includes a passage for uniform oxygen distribution
Implementation Method 2
higher concentration of metallic elements with strong oxygen-bonding energy, such as gallium, to control oxygen vacancies and resistivity within the semiconductor
Data Source
AI summary
In general, according to one embodiment, a semiconductor device includes first to third conductors, a semiconductor, a first insulator, and an insulation region. The semiconductor includes a metal oxide and extends in the first direction to be in contact with the first conductor and the third conductor. The insulation region is surrounded by the semiconductor and extends in the first direction to be in contact with the first conductor. The semiconductor includes a first portion and a second portion defined between the first portion and the insulation region. A concentration of a first element contained in the metal oxide of the semiconductor is higher in the second portion than in the first portion.