Oxidized Barrier Layer Segments for Higher 2DEG Mobility
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Solution Overview
Problem
Existing III-N semiconductor devices face limitations in increasing carrier density and mobility in the 2DEG channel, constrained by physical and manufacturing limitations in forming higher Al content and thicker layers, which affect device performance.
Innovation Solution
Incorporating an oxidized layer segment in select regions of the barrier layer, particularly in the drain access region, using plasma treatment to enhance carrier density and mobility through controlled plasma chemistry and selective exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If higher Al content and thicker barrier layers are formed to increase carrier density and mobility, then device performance improves, but physical and manufacturing limitations prevent achieving the desired performance levels
Solution Approach 1:
The patent applies parameter changes by oxidizing the barrier layer to alter its physical and chemical properties. The oxidation process transforms the barrier layer material, changing its carrier density and mobility characteristics without requiring changes to the physical dimensions or Al content. This resolves the contradiction by achieving performance improvement through chemical state modification rather than physical parameter changes that are constrained by manufacturing limitations.
Solution Approach 2:
The patent creates a composite structure by forming an oxidized region within the barrier layer. This oxidized region has different properties than the unoxidized barrier layer, creating a composite material system where the oxidized portion provides enhanced carrier density and mobility while the unoxidized portions maintain other necessary functions. This composite approach overcomes the limitations of using uniform barrier layer compositions.
2Reliability
If oxidized layer is formed in the entire barrier layer, then carrier density increases uniformly, but device regions requiring different performance characteristics cannot be optimized independently
Solution Approach 1:
The patent applies local quality by forming an oxidized layer segment only in specific device regions (such as the drain access region) rather than uniformly across the entire barrier layer. This allows different regions of the device to have different properties: the oxidized region provides enhanced carrier density and mobility where needed, while unoxidized regions maintain their original characteristics. This resolves the contradiction by enabling region-specific optimization while achieving the desired carrier density enhancement in critical areas.
Solution Approach 2:
The patent segments the barrier layer oxidation process, creating distinct oxidized and unoxidized regions within the barrier layer structure. This segmentation allows independent optimization of different device regions, where the oxidized segment provides enhanced electrical properties in specific areas while other segments maintain their original functionality. This resolves the contradiction between achieving high carrier density and maintaining adaptability for region-specific performance optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances carrier density and mobility in the 2DEG channel, improving device performance by reducing sheet resistance and increasing on-current capacity.
Implementation Method 1
Incorporating an oxidized layer segment in select regions of the barrier layer, particularly in the drain access region, using plasma treatment to enhance carrier density and mobility
Data Source
AI summary
Semiconductor devices with oxidized layer segments in a barrier layer are described. In some examples, a semiconductor device includes a semiconductor substrate, a channel layer over the semiconductor substrate, and a barrier layer over the channel layer. The semiconductor device further includes an oxidized layer including a first segment formed only in a portion of a drain access region of the semiconductor device.