Oxidized SiC Chamber Surfaces for Parasitic Deposition Cleaning
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Solution Overview
Problem
Parasitic deposition on chemical vapor deposition chamber articles during semiconductor manufacturing leads to instability and premature wear, making it challenging to maintain high-quality deposition processes and shortening the articles' lifespan.
Innovation Solution
Applying a protective oxidized surface layer to chamber articles susceptible to parasitic deposition, such as SiC or TaC, which enhances etch resistance against aggressive etchants like Cl2, allowing effective removal of parasitic deposits without damaging the main CVD SiC coating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If aggressive etchants like Cl2 are used to remove parasitic deposits, then parasitic deposition is effectively removed, but the CVD SiC coating on chamber articles is damaged
Solution Approach 1:
A silicon oxide layer is introduced as an intermediary protective barrier between the aggressive Cl2 etchant and the CVD SiC coating. The silicon oxide layer is formed by oxidizing a silicon-containing layer on the chamber article surface before etching, and it selectively protects the underlying SiC coating while allowing effective removal of parasitic silicon deposits through chlorine etching.
Solution Approach 2:
The chemical composition and protective properties of the surface layer are changed by controlling the oxidation process. By adjusting oxidation parameters (temperature, atmosphere, duration), a silicon oxide layer with appropriate thickness and protective characteristics is formed, enabling selective etching resistance.
2Object-generated harmful factors
If mechanical cleaning is used to remove parasitic deposits, then deposits are removed, but micro-cracks and surface damage are introduced
Solution Approach 1:
The mechanical cleaning process is replaced with a chemical etching process. Instead of using physical abrasion or scraping to remove deposits, a chlorine-based chemical etchant is used to selectively remove parasitic silicon deposits through chemical reaction, eliminating the risk of mechanical surface damage.
3Object-generated harmful factors
If frequent chemical or mechanical cleaning is performed, then parasitic deposits are removed, but the article lifespan is shortened due to cumulative damage
Solution Approach 1:
A protective silicon oxide layer is applied in advance to chamber articles before they are subjected to parasitic deposition and cleaning cycles. This preliminary protective action prevents damage during subsequent cleaning operations, allowing articles to withstand multiple etching cycles without cumulative damage, thereby extending their operational lifespan.
4Device complexity
If no protective layer is applied, then the chamber article structure remains simple, but parasitic deposition causes early end-of-life
Solution Approach 1:
The chamber article is designed as a composite structure with multiple functional layers: a base material layer, a CVD SiC coating layer for low parasitic deposition, and a silicon oxide protective layer for etch resistance. This composite structure combines the advantages of each material to achieve both low parasitic deposition and high resistance to cleaning damage, extending article lifespan.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The protective oxidized layer extends the lifespan of chamber articles by preventing excessive etching, maintaining process stability, and reducing the need for frequent mechanical or chemical cleaning, thus improving the efficiency and economy of semiconductor production.
Implementation Method 1
allowing effective removal of parasitic deposits without damaging the main CVD SiC coating
Implementation Method 2
effective removal of parasitic deposits
Data Source
AI summary
The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.