Chemically Amplified Resist Composition with Oxime Quencher
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Solution Overview
Problem
Current chemically amplified resist compositions face challenges in achieving high dissolution contrast and resolution, especially as pattern feature sizes approach the diffraction limit, leading to reduced light contrast and increased acid diffusion, which affects the formation of precise patterns in microelectronic devices.
Innovation Solution
A chemically amplified resist composition incorporating an oxime-bearing compound as an amine quencher and an acid generator, which enhances contrast and resolution by controlling acid diffusion through a Beckmann rearrangement mechanism, allowing for the formation of high-resolution patterns with improved focus margin.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If chemically amplified resist composition is used to enhance sensitivity, then exposure sensitivity is improved, but acid diffusion distance increases which reduces resolution
Solution Approach 1:
The patent introduces an oxime-bearing compound as an amine quencher that acts as an intermediary to control acid diffusion. The oxime group specifically interacts with the acid generated during exposure, quenching its diffusion in the unexposed regions while preserving the chemical amplification effect in exposed regions, thus resolving the contradiction between sensitivity and resolution
Solution Approach 2:
The patent applies local quality by making the quencher function spatially selective through the oxime-bearing compound. The quencher is strategically placed and activated only in unexposed regions where acid diffusion needs to be controlled, while allowing acid-catalyzed reactions to proceed in exposed regions, thereby achieving both high sensitivity and high resolution
2Manufacturing precision
If amine quenchers are added to control acid diffusion, then resolution is improved, but environmental resistance is degraded by amine contamination
Solution Approach 1:
The patent changes the chemical parameter of the quencher from conventional amine groups to oxime-bearing compounds. This parameter change maintains the acid-diffusion control function while significantly improving environmental resistance, as the oxime group is less prone to contamination and degradation in the environment compared to conventional amine quenchers
3Manufacturing precision
If pattern feature size is reduced to increase integration density, then manufacturing precision is improved, but light contrast lowers leading to reduced resolution
Solution Approach 1:
The patent creates a composite resist system combining the base polymer, acid generator, and oxime-bearing compound quencher. This composite formulation enhances the dissolution contrast of the resist film, which compensates for the reduced light contrast at smaller pattern features, thereby maintaining high resolution and rectangularity even at reduced pattern sizes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves high dissolution contrast and resolution, enabling the formation of precise patterns with a wide focus margin, making it suitable for VLSI and mask pattern formation, and is effective in KrF, ArF, EB, and EUV lithography.
Implementation Method 1
A chemically amplified resist composition incorporating an oxime-bearing compound as an amine quencher and an acid generator, which enhances contrast and resolution by controlling acid diffusion through a Beckmann rearrangement mechanism
Data Source
AI summary
A chemically amplified resist composition comprising a base polymer, an acid generator, and a specific oxime compound has a high contrast of alkaline dissolution rate before and after exposure and high resolution and forms a pattern of satisfactory profile with minimal roughness and wide focus margin.