Oxo-dioxolane Acid Generators for EUV Photoresist Resolution
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Solution Overview
Problem
Current photoresists face challenges in achieving highly resolved images with submicron dimensions, particularly in EUV Lithography, where materials with low linewidth roughness and sufficient sensitivity are required for wafer throughput.
Innovation Solution
The development of new acid generators and photoresist compositions that incorporate an oxo-dioxolan and/or oxo-dioxane moiety, specifically ionic compounds like sulfonium acid generators, which react during lithographic processing to produce a bound hydroxyl acetic acid group, enhancing sensitivity and resolution for short-wavelength and EUV imaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist materials are used, then existing commercial applications can be met, but highly resolved images with submicron dimensions cannot be achieved
Solution Approach 1:
The patent modifies the chemical structure of acid generator molecules by incorporating oxo-dioxolan and oxo-dioxane moieties, changing the molecular parameters to achieve higher resolution imaging capability while maintaining material reliability
Solution Approach 2:
The invention creates composite photoresist formulations by combining novel acid generators with specific polymers and additives, achieving enhanced imaging performance that neither component could provide alone
2Manufacturing precision
If EUV lithography is implemented, then highly resolved fine features can be produced, but low linewidth roughness and sufficient sensitivity are difficult to achieve
Solution Approach 1:
The patent optimizes the chemical composition parameters of the photoresist, specifically incorporating acid generators with oxo-dioxolan/oxo-dioxane groups that respond differently to EUV radiation, achieving smoother linewidths while maintaining sensitivity for high throughput
Solution Approach 2:
The invention introduces materials with localized functional properties - the acid generators are designed to react specifically at exposed regions with controlled diffusion, providing local quality enhancement that reduces linewidth roughness without compromising overall sensitivity
3Manufacturing precision
If photoresist composition is altered to improve functional properties, then image resolution can be enhanced, but material complexity increases
Solution Approach 1:
The patent segments the photoresist formulation into distinct functional components - polymer matrix, acid generator, quencher, and solvent - each optimized independently, allowing resolution enhancement without unmanageable overall complexity
Solution Approach 2:
The invention extracts and isolates the critical functional element (oxo-dioxolan/oxo-dioxane acid generator) from the complex photoresist system, allowing this component to be optimized for resolution while the rest of the formulation maintains simplicity and processability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These acid generators improve lithographic performance by providing high-resolution images with sub-50 nm or sub-20 nm dimensions, increasing exposure latitude and reducing linewidth roughness, thus addressing the limitations of existing photoresists in EUV Lithography.
Implementation Method 1
ionic compounds like sulfonium acid generators, which react during lithographic processing to produce a bound hydroxyl acetic acid group
Implementation Method 2
the coating is exposed through a patterned photomask to a source of activating energy such as ultraviolet light to form a latent image
Data Source
AI summary
Acid generator compounds are provided that comprise an oxo-1,3-dioxolane moiety and/or an oxo-1,3-dioxane moiety. The acid generators are particularly useful as a photoresist composition component.