Oxyfluoride Coating Deposition for Plasma Resistance and Low Particle Shedding
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Solution Overview
Problem
Existing methods for forming oxyfluoride coating layers suffer from issues such as chemical deterioration in vacuum plasma processes, generation of contaminant particles, and difficulty in maintaining uniform fluorine content, leading to reduced plasma resistance and increased production costs.
Innovation Solution
A method involving reactive physical vapor deposition, where an oxide evaporation source and a fluoride are heated and vaporized, and the resulting gases are reacted to deposit an oxyfluoride coating layer on a substrate, allowing for precise control of fluorine content and improved plasma resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a YOxFy coating layer is formed using PVD method to suppress contaminant particle drop-off, then plasma resistance is improved, but manufacturing process stability deteriorates and process complexity increases
Solution Approach 1:
The coating formation process is segmented into two separate evaporation sources: one for oxide material and one for fluoride material. This allows independent control and optimization of each material's deposition, simplifying the overall process while maintaining the ability to form oxyfluoride coatings with controlled composition and properties.
2Reliability
If fluorine content is increased to improve plasma resistance, then chemical deterioration is suppressed, but manufacturing cost and process complexity increase
Solution Approach 1:
The fluoride evaporation source temperature is used as a controllable parameter to adjust fluorine content in the coating. By varying the temperature, the deposition rate of fluorine changes, enabling precise control of fluorine content to optimize plasma resistance while avoiding excessive complexity.
Solution Approach 2:
The system allows dynamic adjustment of fluorine content during the deposition process by controlling the fluoride evaporation source temperature. This enables real-time optimization of coating composition to achieve desired plasma resistance without requiring complex pre-planning or multiple processing steps.
3Manufacturing precision
If multiple processing steps are used to prepare evaporation source with fluorine, then coating composition can be controlled, but manufacturing time and cost increase
Solution Approach 1:
The evaporation source preparation is segmented such that oxide and fluoride materials are prepared separately and independently. Each source can be prepared using simple, direct methods without requiring complex multi-step processes, reducing manufacturing time while maintaining composition control through the separate deposition zones.
Solution Approach 2:
The system uses separate evaporation sources that can be independently optimized and replaced. This allows standardization of source preparation procedures and enables quick changes in coating composition by simply changing the fluoride source material or temperature, rather than requiring complex reprocessing of a single combined source.
4Object-generated harmful factors
If coating layer is made denser to improve plasma resistance, then contaminant particle generation is suppressed, but manufacturing precision requirements increase
Solution Approach 1:
The separate evaporation sources create locally optimized deposition zones where oxide and fluoride materials are deposited in controlled proportions. This local control of material composition and deposition conditions enables formation of dense, uniform coatings with reduced contaminant generation while maintaining achievable manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a dense and stable oxyfluoride coating layer with excellent plasma resistance, suppressed generation of contaminant particles, and no cracks, thereby enhancing the stability and efficiency of semiconductor manufacturing processes.
Implementation Method 1
causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source
Implementation Method 2
vaporizing a fluoride accommodated in a second crucible
Implementation Method 3
reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate
Data Source
AI summary
The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.