P-Type Doping Structure With Oxygen Activation and Etch-Free Isolation
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Solution Overview
Problem
Current methods for manufacturing enhancement mode devices face challenges with low activation efficiency and material damage due to thermal annealing, and difficulties in controlling etching accuracy during the manufacturing process, leading to decreased output current density and increased leakage current.
Innovation Solution
A semiconductor structure with a p-type ion doping layer that includes an oxygen-doped activation region and a passivation region, where the oxygen ion is implanted using ion-implantation, allowing for low-temperature activation and avoiding etching damage, with the passivation region providing electrical insulation and enhancing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal annealing is used to activate dopants in p-type semiconductor, then dopant activation occurs, but activation efficiency is low and semiconductor material damage occurs
Solution Approach 1:
The patent changes the activation method from thermal annealing to ion implantation, fundamentally altering the physical parameter of activation. By implanting ions (such as hydrogen or helium) into the p-type semiconductor layer, dopant activation is achieved without high-temperature thermal processes, thereby improving activation efficiency while avoiding thermal damage to the semiconductor material
Solution Approach 2:
The patent replaces the thermal field (thermal annealing) with a mechanical field (ion implantation). Instead of using heat to activate dopants, ion beams are directly implanted into the semiconductor layer, substituting a mechanical/physical process for a thermal process, which eliminates thermal damage while achieving dopant activation
2Ease of manufacture
If etching process is used to remove p-type semiconductor, then p-type semiconductor can be removed, but etching accuracy is difficult to control and etching damages are introduced
Solution Approach 1:
The patent applies preliminary action by selectively deactivating the p-type semiconductor layer in specific regions before the etching process. By using ion implantation to create deactivated regions, the subsequent etching process only affects these predetermined areas, making the etching process easier to control and preventing damage to active regions
Solution Approach 2:
The patent segments the p-type semiconductor layer into active regions and deactivated regions through selective ion implantation. This segmentation allows different portions of the same layer to have different properties (active vs. removable), enabling precise control over where etching should occur and preventing unwanted etching damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves activation efficiency, reduces leakage current, and increases breakdown voltage by controlling the oxygen content gradient in the activation region, facilitating batch preparation of enhancement mode semiconductor devices without etching losses.
Implementation Method 1
implanting, by using ion-implantation, an oxygen-containing gas into the p-type ion doping layer below the window, to form an activation region of which material is doped with an oxygen ion
Data Source
AI summary
A semiconductor structure includes a substrate, a first semiconductor layer, a second semiconductor layer and a p-type ion doping layer sequentially disposed, the p-type ion doping layer includes an activation region and a passivation region enclosing the activation region, and the activation region is an oxygen-doped region. Hydrogen doped in the p-type ion doping layer can be replaced by low-temperature annealing after a process of implementing oxygen ion-implantation, so as to improve activation efficiency of the p-type ion doping layer; the activation region in a gate electrode region and the passivation region in an non-gate electrode region are formed by using a method for selectively activating the p-type ion doping layer, avoiding etching of the p-type ion doping layer, and thus avoiding etching losses; and a plurality of patterned activation regions are obtained by selectively activating on a same substrate, which facilitates batch preparation of enhancement mode semiconductor devices.