Oxygen-Containing Ceramic Hard Masks for Semiconductor Etching
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Solution Overview
Problem
Current hard mask materials in semiconductor processing face issues such as high compressive stress leading to buckling, poor etch selectivity, and the need for different etch platforms, which complicates integration and increases costs, especially when used with low-k dielectric materials.
Innovation Solution
Oxygen-containing ceramic hard mask films deposited using PECVD, which are low-stress, highly selective, and resistant to plasma dry-etch, allowing for easy removal by wet-etch processes without the need for chemical mechanical polishing (CMP), thereby improving patterning capabilities and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If metal-based hard mask (TiN) is used to achieve high etch selectivity relative to low-k dielectric, then etch selectivity is improved, but integration issues arise including polymer residue formation, buckling due to compressive stress, and need for different etch platforms
Solution Approach 1:
The patent changes the material composition parameters by incorporating oxygen into the ceramic hard mask film, creating a material with specific oxygen content that achieves both high etch selectivity and compatibility with wet clean chemistries, eliminating the need for different etch platforms
Solution Approach 2:
The patent uses composite ceramic materials containing oxygen, nitrogen, and carbon in specific ratios to create a hard mask that combines the benefits of high etch selectivity with stress reduction and wet-etch removability, avoiding the integration issues of pure metal-based masks
2Manufacturing precision
If PECVD based ceramic hard mask is used to achieve chemical inertness and low removal rate, then etch selectivity is improved, but removal difficulty increases requiring CMP process
Solution Approach 1:
The patent modifies the chemical composition parameters of the ceramic hard mask by controlling oxygen content and stoichiometry, creating a material that maintains chemical inertness during etching but becomes susceptible to wet clean removal through specific chemical reactions
Solution Approach 2:
The patent creates different local chemical properties within the hard mask material by controlling oxygen distribution and ceramic phase composition, enabling the film to exhibit inertness during plasma etching while being removable by wet chemistry
3Strength
If hard mask material with high compressive stress is used to achieve high hardness and etch selectivity, then protective capability is improved, but buckling and delamination occur
Solution Approach 1:
The patent changes the stress state parameter by adjusting the ceramic film composition and deposition conditions, creating a hard mask with reduced compressive stress that maintains hardness and protective capability without causing buckling or delamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxygen-containing ceramic hard masks provide improved etch selectivity and reduced stress, preventing buckling and delamination, while enabling efficient removal post-patterning, thus enhancing semiconductor processing efficiency and reducing integration complexities.
Implementation Method 1
depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film
Implementation Method 2
removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch
Data Source
AI summary
A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided.