Oxygen-Free Insulating Layer for Copper Electrode Oxidation Prevention
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Solution Overview
Problem
In the manufacturing of thin film transistors and array substrates, the use of metals with low resistivity like copper for electrodes leads to oxidation issues due to high deposition temperatures required for overcoat layers, affecting TFT characteristics and stability.
Innovation Solution
A manufacturing method involving the formation of an oxygen-free insulating layer, made from materials like silane, which prevents oxidation of metallic structures by not containing oxygen elements, allowing for high-temperature deposition of protective layers without oxidizing the metals, thereby improving electrical properties and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high deposition temperature is used for overcoat layers, then the insulating protective layer can be properly formed, but the metallic structure (copper electrodes) will be oxidized
Solution Approach 1:
The patent introduces an oxygen-free insulating layer as an intermediary barrier between the metallic structure and the insulating protective layer. This intermediate layer prevents oxygen from reaching the copper electrodes during high-temperature deposition, allowing the insulating protective layer to be formed at high temperature without oxidizing the metal. The oxygen-free insulating layer acts as a mediator that enables the harmful high-temperature process to proceed while protecting the vulnerable metallic structure.
Solution Approach 2:
The patent creates an oxygen-free (inert) environment by forming an oxygen-free insulating layer made from materials that do not contain oxygen elements. This inert environment protects the metallic structure from oxidation during subsequent high-temperature processing steps. The oxygen-free insulating layer effectively creates a localized inert atmosphere around the copper electrodes, preventing harmful chemical reactions while allowing necessary manufacturing processes to occur.
2Reliability
If copper is used for electrodes, then signal delay is reduced and conductivity is improved, but oxidation occurs at high temperatures affecting TFT characteristics
Solution Approach 1:
The oxygen-free insulating layer serves as a protective intermediary between the copper electrodes and the oxygen-containing environment. This intermediate barrier allows copper to maintain its superior conductivity properties while being protected from oxidation. The layer enables the use of copper electrodes by mediating the interaction between the metal and the processing environment, preventing harmful oxidation while allowing beneficial high-conductivity properties to manifest.
Solution Approach 2:
By surrounding the copper electrodes with an oxygen-free insulating layer, the patent creates a protective inert environment that preserves the metallic structure from oxidation. This inert atmosphere approach allows copper electrodes to deliver their full conductivity potential without degradation from oxidative reactions, maintaining reliable electrical performance in the final display device.
3Reliability
If oxygen-free insulating layer is formed, then metallic structure is protected from oxidation, but additional manufacturing step is required
Solution Approach 1:
The oxygen-free insulating layer serves multiple functions simultaneously: it acts as a protective barrier against oxidation, provides electrical insulation, and serves as a structural layer in the overall device architecture. By making this single layer multi-functional, the patent reduces the need for separate protective layers, thereby minimizing the increase in manufacturing complexity while maximizing protection benefits.
Solution Approach 2:
The patent employs composite material structures where the oxygen-free insulating layer is integrated with other device layers to create a multifunctional system. This composite approach allows the protective function to be achieved without adding separate dedicated protective layers, as the oxygen-free insulating layer is combined with structural and functional requirements of the display device, thereby reducing overall manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents oxidation of metallic structures, enhances signal stability, and reduces signal delay, improving display quality in large-size display devices by maintaining the conductivity of copper electrodes.
Implementation Method 1
changing a part of the semiconductor layer making contact with the oxygen-free insulating layer into conductor by hydrogen released from the silane in the process of forming the oxygen-free insulating layer
Implementation Method 2
forming an oxygen-free insulating layer which does not include oxygen element on a metallic structure, so as to protect the metallic structure, and prevent the metallic structure being oxidized
Implementation Method 3
forming through holes in the oxygen-free insulating layer and the insulating protective layer, wherein the through holes are used for exposing the metallic structure
Data Source
AI summary
Disclosed are an electronic device and the manufacturing method thereof, a manufacturing method of a thin film transistor, and an array substrate and manufacturing method thereof. The manufacturing method of an electronic device includes: forming a metallic structure on a base substrate; forming an oxygen-free insulating layer on the metallic structure and the base substrate; and forming an insulating protective layer on the oxygen-free insulating layer. The manufacturing method of the electronic device protects a metallic structure by forming an oxygen-free insulating layer, not containing oxygen elements, on the metallic structure, and hence prevents the metallic structure from being oxidized.