Oxygen Gettering Layer for Group III-V Semiconductor Interfaces
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Solution Overview
Problem
Group III-V compound semiconductor devices are prone to oxidation when forming an interface with oxide layers, leading to surface roughness and electrical defects due to their low thermal stability and high reactivity, which affects electron mobility and device performance.
Innovation Solution
Incorporating an oxygen gettering layer with a higher affinity for oxygen than the semiconductor material, such as transition metals, doped Zr, lanthanum-based metals, metal sulfides, or metal nitrides, between the compound semiconductor layer and the dielectric layer to prevent oxygen diffusion and oxidation, along with a passivation layer to further suppress oxidation, using methods like atomic layer deposition or chemical vapor deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a dielectric layer is formed directly on the compound semiconductor layer, then the device structure is simple, but oxygen diffusion causes surface oxidation, increasing surface roughness and creating electrical defects
Solution Approach 1:
An oxygen gettering layer is introduced as an intermediary between the compound semiconductor layer and the dielectric layer. This gettering layer has a higher affinity for oxygen than the compound semiconductor material, effectively trapping oxygen atoms and preventing them from reaching and oxidizing the semiconductor surface, thereby maintaining electrical characteristics while preserving structural simplicity
Solution Approach 2:
The oxygen gettering layer is formed in advance before the dielectric layer deposition. This preliminary action ensures that oxygen is trapped at the interface before the dielectric layer can cause oxidation, preventing surface roughness and electrical defects from occurring during subsequent processing steps
2Ease of manufacture
If the compound semiconductor layer is exposed to oxygen during fabrication, then processing is straightforward, but oxidation occurs leading to surface roughness and physical defects
Solution Approach 1:
The oxygen gettering layer serves as a protective intermediary that allows straightforward fabrication processing while preventing oxygen from reaching the compound semiconductor layer, thus avoiding surface oxidation and maintaining manufacturing precision
Solution Approach 2:
The high reactivity and oxygen affinity of the gettering layer material, which could be seen as a disadvantage, is converted into a benefit by using this property to actively scavenge oxygen atoms and protect the compound semiconductor layer from oxidation during fabrication
3Device complexity
If no oxygen barrier is used, then the fabrication process is simple, but element diffusion occurs between layers degrading device performance
Solution Approach 1:
The oxygen gettering layer acts as a diffusion barrier intermediary between the compound semiconductor layer and the dielectric layer, preventing element diffusion while maintaining compositional stability without adding significant structural complexity
Solution Approach 2:
The device structure employs a composite layered approach, combining the compound semiconductor layer with the oxygen gettering layer and dielectric layer. This composite structure leverages the specific properties of each material layer to achieve both simplicity and stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxygen gettering layer effectively prevents oxygen penetration and element diffusion, maintaining the high-k dielectric characteristics of the dielectric layer, reducing crystal defects, current leakage, and improving electron mobility, resulting in enhanced semiconductor device performance with improved interfacial and electrical characteristics.
Implementation Method 1
an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer, the oxygen gettering layer including a material having a higher affinity for oxygen
Implementation Method 2
using methods like atomic layer deposition or chemical vapor deposition
Implementation Method 3
using methods like atomic layer deposition or chemical vapor deposition
Data Source
Figure 1~2A
Figure 2B~3
Figure 4~5
AI summary
The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.