3D Non-Volatile Register Using Oxygen-Ion Memory for Logic Simplification
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing non-volatile registers, such as flash memory and EEPROM, require complex designs and high voltage charge pumps, leading to increased logic complexity and high failure rates, necessitating improved storage solutions.
Innovation Solution
A non-volatile register design utilizing vertically configured third dimension memory with two-terminal memory elements, including an electrolytic tunnel barrier and mixed valence conductive oxide, which allows for reduced die size and simplified logic without requiring a silicon substrate, using write and read voltages to switch between resistive states for data storage and retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If flash memory or EEPROM is used as a non-volatile register, then data storage capability is achieved, but device complexity and failure rate increase due to required charge pumps and complex programming algorithms
Solution Approach 1:
The patent extracts and removes the charge pump component from the memory system. The oxygen-ion-based memory element directly switches between resistive states using simple voltage signals without requiring high-voltage charge pumps, thereby reducing device complexity and failure rates associated with charge pump circuits and their control logic.
Solution Approach 2:
The patent changes the operational parameters from high-voltage charge pump-based programming to low-voltage resistive state switching. The memory element uses simple voltage application to switch between high and low resistance states, eliminating the need for complex programming algorithms and high-voltage generation circuits.
2Area of stationary object
If traditional non-volatile memory designs are used, then data storage is achieved, but die size increases due to required charge pumps and complex logic circuits
Solution Approach 1:
The patent merges the memory storage function directly with the logic circuit layer using vertically stacked architecture. The oxygen-ion-based memory element is positioned above the logic circuit, sharing the same substrate and reducing the overall die area by eliminating separate charge pump circuits and complex programming logic that would otherwise occupy additional space.
Solution Approach 2:
The patent transitions from planar memory architecture to three-dimensional vertically stacked configuration. The memory element is placed in the vertical dimension above the logic circuit, allowing both storage and logic functions to coexist on the same die area without interfering with each other, thereby reducing the horizontal die size.
3Ease of manufacture
If flash memory or EEPROM is configured as a register, then non-volatile storage is achieved, but manufacturing complexity increases due to specialized charge pump designs and complex programming algorithms
Solution Approach 1:
The patent removes the charge pump component from the manufacturing requirements. The oxygen-ion-based memory element can be fabricated using standard semiconductor processing techniques without requiring specialized high-voltage charge pump circuitry, simplifying the manufacturing process and reducing production complexity.
Solution Approach 2:
The memory element performs self-switching between resistive states through direct voltage application without requiring external charge pump control circuits. This self-service capability eliminates the need for complex programming algorithms and external high-voltage generation, simplifying both manufacturing and operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the complexity and failure rates associated with traditional non-volatile registers by enabling efficient data storage and retrieval in a compact form factor, minimizing the need for high voltage charge pumps and complex programming algorithms.
Implementation Method 1
the memory element has a first resistive state corresponding to a first value of the datum and a second resistive state corresponding to a second value of the datum
Implementation Method 2
a read voltage is applied across the memory element. The voltage associated with the resistance of the memory element is sensed
Data Source
AI summary
A non-volatile register includes a memory element. The memory element comprises a first end and a second end. The non-volatile register includes a register logic connected with the first and second ends of the memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.