Oxygen-Modified N-Type Electrode for Low Contact Resistance
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Solution Overview
Problem
Conventional methods for forming n-type electrodes on group III nitride single crystal layers result in high contact resistance, which limits the performance and durability of semiconductor devices, particularly those requiring high current output and low voltage.
Innovation Solution
Incorporating oxygen atoms at a specific concentration in the n-type electrode layers, formed through a heat treatment process in a mixed gas atmosphere containing oxygen and inert gases, to reduce the thickness of the damaged layer and lower contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional metal layers (Ti/Al/Au) are formed on n-type GaN layer, then favorable contact resistance value is obtained, but contact resistance increases when applied to n-type group III nitride single crystal layer containing Al
Solution Approach 1:
The invention changes the chemical composition parameter of the electrode layer by incorporating oxygen atoms at a specific concentration (0.01 to 0.1 atomic ratio of O to Al). This parameter change transforms the electrode material from conventional Ti/Al/Au to an oxygen-containing compound layer, enabling low contact resistance on Al-containing nitride layers while maintaining effectiveness on standard GaN layers
Solution Approach 2:
The invention creates a composite structure by forming a compound layer containing oxygen, aluminum, and nitrogen atoms between the metal electrode and the nitride semiconductor. This composite layer acts as an intermediate material that bridges the mismatch between conventional electrodes and Al-containing nitride layers, resolving the adaptability issue
2Power
If higher current is applied to achieve higher output, then device performance improves, but voltage increases and contact resistance becomes more critical
Solution Approach 1:
By changing the oxygen concentration parameter in the electrode layer to a specific range (0.01 to 0.1 atomic ratio), the invention optimizes the electrical properties of the contact interface, enabling lower contact resistance that can withstand higher currents and voltages required for high-power devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach effectively decreases contact resistance and enhances the bonding properties of the n-type electrode with the group III nitride single crystal layer, leading to improved durability and performance of semiconductor devices.
Implementation Method 1
formed through a heat treatment process in a mixed gas atmosphere containing oxygen and inert gases
Implementation Method 2
Incorporating oxygen atoms at a specific concentration in the n-type electrode layers, formed through a heat treatment process in a mixed gas atmosphere containing oxygen and inert gases
Data Source
Figure 1(a)~1(e)
Figure 2~3
AI summary
[Object] To provide an n-type electrode forming method for providing an n-type laminate including an excellent n-type electrode wherein a contact resistance value is further reduced, particularly when the n-type laminated structure which can be used in semiconductor devices such as a light emitting device and a laser diode, especially includes an n-type group III nitride single crystal layer containing Al. [Solving Means] Provided is an n-type electrode to be formed on an n-type group III nitride single crystal layer, which includes a first electrode layer to be formed on the n-type group III nitride single crystal layer and a second electrode layer formed on the first electrode layer and in which at least the first electrode layer contains nitrogen atoms and oxygen atoms and an atomic ratio of the oxygen atoms to the nitrogen atoms is 0.2 or more and 2.0 or less.