Oxygen Precipitates Wafer Gettering
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Solution Overview
Problem
In semiconductor device production, undesired impurities such as metal atoms can reduce the voltage blocking capability of power semiconductor devices, and existing methods like polysilicon layers for gettering impurities are not feasible for all wafer types, necessitating an alternative impurity removal method.
Innovation Solution
Forming an oxygen-containing region in a semiconductor wafer by introducing oxygen and creating vacancies through annealing processes to generate oxygen precipitates, which act as gettering centers to capture impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a polysilicon layer is formed on the wafer surface to getter impurities, then impurity removal capability is improved, but the method is not applicable to all wafer types and requires additional process steps
Solution Approach 1:
The invention changes the physical and chemical parameters of the semiconductor wafer itself by introducing oxygen and creating vacancies through ion implantation and annealing processes. This transforms the bulk wafer material to have gettering capability, eliminating the need for polysilicon layers and making the method applicable to all wafer types regardless of surface processing compatibility.
Solution Approach 2:
The invention extracts the gettering function from a separate polysilicon layer and integrates it directly into the semiconductor wafer bulk by creating oxygen-containing regions with vacancies. This eliminates the need for additional polysilicon deposition and removal steps, simplifying the overall process while maintaining impurity removal effectiveness.
2Reliability
If oxygen is introduced and annealing is performed to form oxygen precipitates, then gettering centers are formed to capture impurities, but additional processing steps are required
Solution Approach 1:
The invention merges the gettering center formation process with standard semiconductor manufacturing annealing steps. By creating oxygen-containing regions that form precipitates during常规 annealing processes, the method integrates impurity removal into existing process flows rather than adding completely separate processing stages.
Solution Approach 2:
The invention performs preliminary oxygen introduction and vacancy creation through ion implantation before standard device fabrication. The oxygen-containing regions are prepared in advance, and the actual gettering centers form during subsequent annealing steps that are already part of the manufacturing process, reducing the need for additional dedicated processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxygen precipitates effectively remove impurities, enhancing the voltage blocking capability of semiconductor devices and providing a viable alternative to polysilicon-based gettering methods, especially for wafer types where polysilicon layers are not applicable.
Implementation Method 1
introducing oxygen via a first surface into the semiconductor wafer
Implementation Method 2
annealing at least the oxygen containing region in a first annealing process
Implementation Method 3
annealing at least the oxygen containing region in a first annealing process so as to form oxygen precipitates
Data Source
AI summary
Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region includes introducing oxygen via a first surface into the semiconductor wafer. The method further includes creating vacancies at least in the oxygen containing region and annealing at least the oxygen containing region in an annealing process so as to form oxygen precipitates.