Oxygen-Containing Schottky Electrode for Semiconductor Apparatus
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Solution Overview
Problem
The manufacturing process of Schottky electrodes for semiconductor apparatuses is complicated due to the requirement of multiple layers, which hinders the formation of a Schottky barrier height effectively.
Innovation Solution
A method involving a Schottky electrode made of a metal material with a predetermined concentration of oxygen atoms, such as molybdenum, is used, which can be formed using a single layer structure through reactive sputtering or by alternately laminating metal and oxide layers, allowing for adjustment of oxygen concentration via annealing or gas composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Schottky electrode is formed with multiple layers (metal layer and metal oxide layer) to achieve high Schottky barrier height, then the reverse leak current is reduced, but the manufacturing process becomes complicated
Solution Approach 1:
The patent combines the metal layer and metal oxide layer into a single integrated Schottky electrode layer made of oxygen-containing metal material. This merging of multiple functional layers into one material system achieves both the Schottky barrier height enhancement and manufacturing simplification, directly resolving the technical contradiction between reliability improvement and process complexity
Solution Approach 2:
The patent changes the compositional parameter of the metal material by incorporating oxygen atoms at controlled concentrations (1.0E19 cm−3 to 1.0E22 cm−3). This parameter modification allows the single-layer electrode to achieve the functional properties previously requiring multiple layers, thereby reducing manufacturing complexity while maintaining high Schottky barrier height and low reverse leak current
2Reliability
If a Schottky electrode is formed with multiple layers to achieve high Schottky barrier height, then the reverse leak current is reduced, but the ease of manufacture deteriorates
Solution Approach 1:
The patent merges the functions of separate metal and metal oxide layers into a single oxygen-containing metal material layer, eliminating the need for multiple deposition and annealing steps. This directly improves ease of manufacture while achieving the same electrical performance of high Schottky barrier height and low reverse leak current
Solution Approach 2:
The patent extracts the essential functional requirement (high Schottky barrier height) from the complex multi-layer structure and achieves it through a simplified single-layer approach with controlled oxygen content. This extraction of core functionality eliminates unnecessary manufacturing steps while maintaining the desired electrical characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process while achieving a higher Schottky barrier height and maintaining sufficient conductivity, effectively reducing reverse leak current values.
Implementation Method 1
The forming of the Schottky electrode may be performed by a reactive sputtering method that adds gas containing oxygen atoms to atmospheric gas
Implementation Method 2
the semiconductor substrate on which the laminated structure is formed may be subjected to annealing processing to diffuse oxygen atoms from the layer of the oxide of the metal material to the layer of the metal material
Implementation Method 3
the surface of the semiconductor substrate may be oxidized, a film of the metal material may be formed on the oxidized surface of the semiconductor substrate
Data Source
AI summary
A method of manufacturing a semiconductor apparatus includes preparing a semiconductor substrate, and forming a Schottky electrode that is in Schottky contact with a surface of the semiconductor substrate. The Schottky electrode is made of a metal material containing a predetermined concentration of oxygen atoms.