Oxygen-Stuffed Barrier Layer for Semiconductor Reliability
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Solution Overview
Problem
Conventional semiconductor structures with non-oxygen-stuffed barrier layers are prone to corrosion and resistance degradation due to diffusion of reactive gases and materials, particularly when using copper interconnection layers, leading to void formation and resistance changes.
Innovation Solution
Incorporating oxygen into the grain boundaries of the barrier layer between conductive and via layers, which blocks diffusion paths and counteracts boundary defects, thereby preventing corrosion from gases like WF6 and reducing Ti diffusion that causes copper voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional barrier layer is used without oxygen stuffing, then the manufacturing process is simple, but the barrier layer is prone to corrosion and resistance degradation due to diffusion of reactive gases and materials
Solution Approach 1:
The patent applies parameter changes by introducing oxygen into the barrier layer structure. Specifically, oxygen is incorporated into the barrier layer through plasma treatment or chemical vapor deposition, changing the chemical composition and structural properties of the barrier layer. This oxygen incorporation creates a more stable and corrosion-resistant barrier layer without requiring a complete redesign of the interconnection structure.
Solution Approach 2:
The patent employs composite materials by creating an oxygen-containing barrier layer that combines the properties of the original barrier material (such as tungsten or copper) with oxygen. This composite structure forms a protective oxide layer or oxygen-rich region within the barrier layer that prevents diffusion of reactive gases and materials, thereby improving corrosion resistance while maintaining the barrier function.
2Reliability
If a barrier layer is used to prevent diffusion, then corrosion is prevented, but reactive gases can still diffuse through non-oxygen-stuffed barrier layers causing resistance degradation
Solution Approach 1:
The patent changes the physical and chemical parameters of the barrier layer by incorporating oxygen. This oxygen incorporation modifies the diffusion properties of the barrier layer, creating a more dense and less permeable structure that effectively blocks the diffusion of reactive gases such as WF6. The oxygen atoms occupy interstitial sites or form oxide compounds that reduce the available diffusion pathways.
Solution Approach 2:
The patent converts the potentially harmful effect of oxygen (which can cause oxidation and resistance changes) into a beneficial effect. By intentionally introducing oxygen in a controlled manner during manufacturing, the patent creates a stable oxide layer or oxygen-rich region that actually prevents further oxidation and gas diffusion. The initial oxygen introduction prevents subsequent harmful diffusion processes.
3Reliability
If oxygen is stuffed into the barrier layer, then diffusion paths are blocked and corrosion is prevented, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies preliminary action by incorporating oxygen into the barrier layer during the manufacturing process, before the interconnection structure is fully assembled and before corrosion can occur. The oxygen stuffing is performed as an intermediate step during fabrication, using plasma treatment or chemical vapor deposition, which prepares the barrier layer in advance to resist subsequent corrosion and gas diffusion challenges.
Solution Approach 2:
The patent changes the manufacturing parameters by integrating oxygen incorporation into existing fabrication steps. Rather than adding a completely new manufacturing step, the oxygen stuffing is achieved by modifying parameters of existing processes (such as plasma treatment conditions or CVD parameters), thereby improving corrosion resistance while minimizing the increase in manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxygen-stuffed barrier layer effectively prevents corrosion and resistance degradation, maintaining stable resistance over extended periods and eliminating copper voids, as demonstrated by stress migration tests.
Implementation Method 1
the barrier layer is stuffed with oxygen... blocks diffusion paths... preventing corrosion from gases like WF6 and reducing Ti diffusion
Implementation Method 2
oxygen is stuffed into grain boundaries of the barrier layer... counteracts boundary defects
Data Source
AI summary
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a conductive layer, a via, and a barrier layer disposed between the conductive layer and the via. The barrier layer is stuffed with oxygen.