OLED Display Panel Oxygen-Tuned Insulating Layers for IGZO Stability
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Solution Overview
Problem
The poor stability of indium gallium zinc oxide (IGZO) transistors in OLED display panels affects the performance of driver and pixel circuits, leading to instability in the display panel's performance.
Innovation Solution
A display panel design that includes a first transistor with a silicon active layer and a second transistor with an oxide semiconductor active layer, where the oxygen concentration in the insulating layers is strategically adjusted to enhance the stability of the second transistor, preventing deficiencies and ensuring normal function.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If IGZO is used as the active layer material for the second transistor to reduce leakage current, then the transistor can achieve lower leakage current, but the stability of the transistor deteriorates
Solution Approach 1:
The patent changes the oxygen concentration parameter in the insulating layers. Specifically, the first insulating layer has an oxygen concentration of 10-20 at%, while the second insulating layer has an oxygen concentration of 30-40 at%. This parameter change optimizes the interface quality between the insulating layers and the oxide semiconductor active layer, reducing interface defects that cause instability while maintaining the low leakage current特性 of IGZO transistors
Solution Approach 2:
The patent applies different oxygen concentrations to different insulating layers based on their specific functions and positions. The first insulating layer (closer to the active layer) has lower oxygen concentration (10-20 at%) to reduce interface defects, while the second insulating layer ( farther from the active layer) has higher oxygen concentration (30-40 at%) to provide better insulation and stability. This local quality differentiation resolves the stability issue without sacrificing the low leakage current advantage
Data Source
AI summary
Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.