Oxygenating Layer in Field Effect Transistors for Stable Active Layers
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Solution Overview
Problem
Field effect transistors used in high pixel density displays face issues with short channel effects and positive bias temperature instability due to oxygen vacancies in the active layer, leading to poor performance and increased off-state current.
Innovation Solution
A field effect transistor design that includes an oxygenating layer overlapping with the active layer, reducing oxygen vacancies and improving uniformity and stability, along with a method for manufacturing that involves forming the oxygenating layer in an environment with high oxygen concentration to diffuse oxygen elements and suppress short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the active layer is made thinner to increase pixel density, then the image density is improved, but short channel effects and positive bias temperature instability worsen due to oxygen vacancies
Solution Approach 1:
An oxygenating layer is formed over the active layer before final device operation. This layer pre-supplies oxygen to the active layer, preventing oxygen vacancies from forming in the first place. The oxygenating layer acts as a reservoir that continuously replenishes oxygen to the active layer, thereby maintaining device stability even as the active layer thickness is reduced to increase pixel density.
Solution Approach 2:
The oxygenating layer serves as an intermediary between the environment and the active layer. Instead of directly exposing the thin active layer to environmental variations that cause oxygen vacancies, the oxygenating layer mediates by providing a controlled oxygen supply, thereby protecting the active layer and maintaining device reliability at high pixel densities.
2Area of moving object
If the active layer thickness is reduced to achieve higher pixel density, then the display resolution is improved, but off-state current increases due to short channel effects
Solution Approach 1:
The oxygenating layer is formed in advance to prevent oxygen vacancies before they can cause short channel effects. By ensuring the active layer is fully oxygenated before device operation, the electrical properties are stabilized, preventing the increase in off-state current that would otherwise occur with thinner active layers designed for higher pixel density.
Solution Approach 2:
The invention changes the oxygen concentration parameter within the active layer by introducing the oxygenating layer. This parameter change from oxygen-deficient to oxygen-saturated state modifies the electrical characteristics of the active layer, thereby suppressing short channel effects and reducing off-state current even when the active layer thickness is reduced for higher pixel density.
3Ease of manufacture
If oxygen vacancies are present in the active layer to simplify manufacturing, then the manufacturing process is easier, but uniformity and stability of the active layer deteriorate
Solution Approach 1:
The oxygenating layer enables the active layer to self-correct oxygen deficiencies. By providing a continuous oxygen supply, the system allows the active layer to maintain its own oxygen saturation levels without requiring complex external oxygen introduction processes during manufacturing. This self-service mechanism maintains uniformity and stability while keeping the manufacturing process relatively simple.
Solution Approach 2:
Instead of attempting to prevent oxygen vacancies during the complex process of thin active layer formation, the invention takes preliminary action by forming the oxygenating layer afterward. This simpler subsequent step automatically ensures uniform oxygen distribution throughout the active layer, achieving better uniformity and stability without complicating the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces oxygen vacancies, improving the stability and uniformity of the active layer, leading to enhanced performance and reduced off-state current in field effect transistors, thereby improving the display's image density and reliability.
Implementation Method 1
forming an oxygenating layer on the first insulating layer, wherein an orthographic projection of the oxygenating layer on the substrate is overlapped with an orthographic projection of the target region of the active layer on the substrate
Data Source
AI summary
The present disclosure provides a field effect transistor and a method for manufacturing the same, and a display panel, relating to the field of display technologies. The field effect transistor includes a substrate, an active layer, a source, a drain, a first insulating layer and an oxygenating layer. An orthographic projection of the oxygenating layer on the substrate is overlapped with an orthographic projection of a target region of the active layer on the substrate. Therefore, when the oxygenating layer is prepared, oxygen elements in the process environment can diffuse to the target region of the active layer, to oxygenate the active layer. In this way, oxygen vacancies in the active layer can be reduced, and the uniformity and stability of the active layer is improved, thereby further improving the performance of the field effect transistor.