Oxynitride Capping Structure for Crack-Resistant Die Bonding

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Solution Overview

Problem

The challenge in semiconductor manufacturing lies in minimizing development of cracks and enhancing the overall strength of stacked and bonded semiconductor devices, particularly in wafer-level packaging where sophisticated bonding processes are used to integrate active circuits on separate substrates.

Innovation Solution

Incorporating a capping member with an oxynitride layer surrounding the die structure to improve structural integrity, combined with an insulating member, which includes layers with varying oxygen and nitride content to enhance bonding and reduce crack formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If sophisticated bonding processes are used to integrate active circuits on separate substrates, then integration density is improved, but crack development occurs and structural strength deteriorates

Engineering Contradiction:

Improveintegration densityVSAvoidstructural strength

Core Design Contradiction:

ProductivityVSStrength

Solution Approach 1:

The capping member is divided into multiple layers including an oxynitride layer and other dielectric layers, each serving specific functions. This segmentation allows the structure to accommodate thermal expansion differences and stress variations between bonded substrates, preventing crack propagation while maintaining high integration density through sophisticated bonding processes

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The capping member utilizes composite material structure combining oxynitride layer with other dielectric materials. This composite approach provides both mechanical strength to prevent cracking and appropriate dielectric properties for electrical isolation, enabling the structure to withstand the stresses introduced by sophisticated bonding processes while maintaining integration density

Inventive Principle:

Principle #40Composite materials

2Volume of moving object

If wafer-level packaging techniques are employed, then device miniaturization is achieved, but crack formation increases and reliability deteriorates

Engineering Contradiction:

Improvedevice sizeVSAvoiddevice reliability

Core Design Contradiction:

Volume of moving objectVSReliability

Solution Approach 1:

The oxynitride layer in the capping member acts as a preventive measure against crack formation. By incorporating this layer before final device assembly and bonding, the structure is pre-conditioned to resist thermal and mechanical stresses, cushioning against potential crack initiation and propagation that would otherwise compromise device reliability in miniaturized wafer-level packaging

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS20260096470A1Semiconductor structure with capping member containing oxynitride layer and method of manufacturing thereof

Publication Date: 2026.04.02 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

The semiconductor structure includes a die structure including: a substrate, a first dielectric disposed over the substrate, a first interconnect structure disposed within the first dielectric, a second dielectric disposed on the first dielectric, and a conductive pad surrounded by the second dielectric, a capping member surrounding the die structure, and an insulating member surrounding the capping member, wherein the capping member includes a first oxynitride layer in contact with the die structure or the insulating member.