Oxynitride Capping Structure for Crack-Resistant Stacked Dies

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Solution Overview

Problem

The semiconductor industry faces challenges in minimizing development of cracks and enhancing the overall strength of stacked and bonded semiconductor devices, which are crucial for further reducing the physical size and improving integration density.

Innovation Solution

The implementation of a capping member containing an oxynitride layer surrounding the die structure, along with an insulating member, to provide structural support and minimize crack development, thereby enhancing the semiconductor structure's integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If stacked and bonded semiconductor devices are used to reduce physical size, then integration density is improved, but structural strength decreases and crack development increases

Engineering Contradiction:

Improveintegration densityVSAvoidstructural strength

Core Design Contradiction:

Quantity of substanceVSStrength

Solution Approach 1:

The patent applies composite materials by forming a capping member comprising multiple layers including an oxynitride layer and a nitride layer. This multi-layer composite structure provides enhanced mechanical strength and crack resistance to the stacked semiconductor device while maintaining the compact form factor required for high integration density.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent implements beforehand cushioning by forming the oxynitride layer as a capping member over the stacked semiconductor device before packaging. This pre-applied protective layer acts as a cushion against mechanical stresses and prevents crack development during subsequent handling and operation, thereby maintaining structural integrity in compact stacked configurations.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

2Quantity of substance

If minimum feature size is reduced to increase integration density, then more components fit in given area, but device reliability decreases due to increased crack susceptibility

Engineering Contradiction:

Improveintegration densityVSAvoiddevice reliability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The multi-layer capping member comprising oxynitride and nitride layers provides a composite protective structure that compensates for the increased fragility associated with reduced minimum feature sizes. This composite structure distributes mechanical stresses and prevents crack propagation, thereby maintaining device reliability despite higher integration density.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent applies local quality by forming the capping member specifically over critical regions of the stacked semiconductor device. The oxynitride and nitride layers provide localized protection where it is most needed, enhancing reliability of miniaturized features without requiring uniform thickening across the entire device structure.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS12519026B2Semiconductor structure with capping member containing oxynitride layer and method of manufacturing thereof

Publication Date: 2026.01.06 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

The semiconductor structure includes a die structure including: a substrate, a first dielectric disposed over the substrate, a first interconnect structure disposed within the first dielectric, a second dielectric disposed on the first dielectric, and a conductive pad surrounded by the second dielectric; a capping member surrounding the die structure; and an insulating member surrounding the capping member, wherein the capping member includes a first oxynitride layer in contact with the die structure or the insulating member.