Magnesium-Aluminum Oxynitride Ceramic Heater for Semiconductor Processing
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Solution Overview
Problem
Ceramic heaters used in semiconductor production, particularly those made of aluminum nitride, face challenges with corrosion from halogen-based gases, leading to surface changes, temperature uniformity issues, and reduced effectiveness over time, especially when operating outside designed temperature ranges.
Innovation Solution
A ceramic heating apparatus utilizing a susceptor made from a magnesium-aluminum oxynitride ceramic material with a main phase exhibiting XRD peaks between 2θ=47 to 50°, offering superior corrosion resistance and thermal conductivity properties, maintaining temperature uniformity across a wide temperature range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If aluminum nitride ceramic material is used for heater, then good initial temperature uniformity is achieved, but corrosion resistance deteriorates over time leading to surface changes and temperature distribution changes
Solution Approach 1:
The patent employs a composite ceramic material comprising magnesium aluminate spinel and aluminum nitride in specific proportions (spinel: 10-70 wt%, AlN: 30-90 wt%). This composite structure combines the corrosion resistance of spinel with the high thermal conductivity and initial temperature uniformity of AlN, resolving the contradiction between initial performance and long-term durability under corrosive halogen-based gases.
2Power
If heating temperature exceeds designed temperature, then heating capability is improved, but hot spot generation occurs near center leading to temperature uniformity deterioration
Solution Approach 1:
The patent introduces a thickness variation design where the heater thickness changes from the center toward the periphery (thickness at center > thickness at periphery). This local quality adjustment compensates for the natural heat accumulation at the center during high-temperature operation, preventing hot spot formation and maintaining temperature uniformity even when operating above the designed temperature.
3Quantity of substance
If AlN shaft is used for supporting, then thermal conductivity is improved, but heat dissipation from shaft increases making wide temperature range operation difficult
Solution Approach 1:
The patent modifies the thermal conductivity parameter of the supporting shaft by using magnesium aluminate spinel material, which has lower thermal conductivity than AlN. This parameter change reduces excessive heat dissipation from the shaft, enabling the heater to maintain stable temperature distribution across a wide temperature range and improving adaptability to different processing conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnesium-aluminum oxynitride ceramic material ensures long-term resistance to halogen-based corrosive gases, reduces particle generation, and maintains excellent temperature uniformity on wafers even when operating outside designed temperature ranges, enhancing the durability and performance of ceramic heaters in semiconductor processing.
Implementation Method 1
The ceramic material has main components including magnesium, aluminum, oxygen and nitrogen, and has a main phase comprising a magnesium-aluminum oxynitride phase
Implementation Method 2
a heating resistor is embedded in an aluminum nitride based ceramic plate
Implementation Method 3
As a member of holding and further heating an Si wafer in a semiconductor production system, it has been widely used a ceramic heater made of AlN (aluminum nitride)
Data Source
AI summary
A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.