Metal-Oxynitride IMS Dielectric Layer for Heat and Electrical Isolation
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Solution Overview
Problem
Existing ceramic core substrate (CCS) devices face issues with thermal stress fractures due to thermal expansion coefficient differences and thermal cycle stress, leading to reduced longevity and performance, while insulated metal substrates (IMS) face challenges in achieving high thermal conductivity and electrical insulation with alumina and aluminum nitride deposited-dielectric layers, which are difficult to produce and require complex adhesion processes.
Innovation Solution
The use of a metal-oxynitride film, such as aluminum oxynitride (AlON), with controlled oxygen and nitrogen doping, provides a deposited-dielectric layer that enhances adhesion, thermal conductivity, and electrical insulation, mitigating stress through non-columnar growth and composition gradients, and includes stress reduction layers for improved durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If alumina deposited-dielectric layer is used in IMS, then electrical insulation is provided, but thermal conductivity is poor (1-30 W/mK)
Solution Approach 1:
The patent applies composite materials by creating a dual-layer dielectric structure: an alumina layer for electrical insulation and an aluminum nitride layer for high thermal conductivity. This composite approach allows the device to simultaneously achieve both electrical insulation and thermal management requirements that neither material could provide alone.
2Ease of manufacture
If alumina deposited-dielectric layer is used in IMS, then production is easy via oxidation, but thermal conductivity remains low and adhesion is poor
Solution Approach 1:
The patent applies composite materials by creating a dual-layer dielectric structure: an alumina layer for electrical insulation and an aluminum nitride layer for high thermal conductivity. This composite approach allows the device to simultaneously achieve both electrical insulation and thermal management requirements that neither material could provide alone.
3Temperature
If AIN deposited-dielectric layer is used in IMS, then thermal conductivity is high, but electrical insulation is insufficient and production is difficult
Solution Approach 1:
The patent applies composite materials by creating a dual-layer dielectric structure: an alumina layer for electrical insulation and an aluminum nitride layer for high thermal conductivity. This composite approach allows the device to simultaneously achieve both electrical insulation and thermal management requirements that neither material could provide alone.
4Reliability
If DPC/DBC CCS devices are used, then thermal conductivity and electrical insulation are achieved, but thermal stress fractures occur due to thermal expansion coefficient differences
Solution Approach 1:
The patent applies parameter changes by modifying the dielectric layer composition to include aluminum nitride, which has a thermal expansion coefficient more closely matched to copper than alumina. This parameter change in material composition reduces thermal stress during thermal cycling, preventing fractures while maintaining thermal management performance.
Solution Approach 2:
The patent applies composite materials by creating a dual-layer dielectric structure: an alumina layer for electrical insulation and an aluminum nitride layer for high thermal conductivity. This composite approach allows the device to simultaneously achieve both electrical insulation and thermal management requirements that neither material could provide alone.
5Ease of manufacture
If DPC/DBC CCS devices are used, then manufacturing is established, but delayed fracture occurs due to thermal cycle stress under service conditions
Solution Approach 1:
The patent applies parameter changes by modifying the dielectric layer composition to include aluminum nitride, which has a thermal expansion coefficient more closely matched to copper than alumina. This parameter change in material composition reduces thermal stress during thermal cycling, preventing fractures while maintaining thermal management performance.
Solution Approach 2:
The patent applies beforehand cushioning by incorporating a stress-matched aluminum nitride layer that anticipates and compensates for thermal expansion mismatches during service conditions. This layer acts as a buffer that prevents delayed fracture from thermal cycle stress, extending the device's operational longevity.
6Ease of manufacture
If alumina layer is deposited on aluminum core-metal-substrate, then oxidation process works well, but adhesion to other metals like copper, steel, nickel, titanium, tungsten, and molybdenum is poor
Solution Approach 1:
The patent applies parameter changes by selecting aluminum nitride as the dielectric material, which provides superior adhesion to multiple metal substrates including copper, steel, nickel, titanium, tungsten, and molybdenum. This material parameter change maintains the ease of deposition while dramatically improving interfacial adhesion strength across different metal types.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The AlON deposited-dielectric layer achieves high thermal conductivity (5-14 W/mK) and dielectric strength (50-120 kV/mm), addressing the fracture and adhesion issues of CCS devices and enabling efficient thermal management and electrical isolation in electronic devices.
Implementation Method 1
The AlON deposited-dielectric layer achieves high thermal conductivity (5-14 W/mK)
Implementation Method 2
The AlON deposited-dielectric layer achieves high thermal conductivity (5-14 W/mK) and dielectric strength (50-120 kV/mm)
Data Source
Figure 1A~1D
Figure 2A~3
Figure 4A~4D
AI summary
The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at% to 49.9 at%, nitrogen is from 0.1 at% to 49.9 at% and a sum of oxygen and nitrogen is about 50 at%. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AION), aluminum oxyhydronitride (AIHON), aluminum oxycarbonitride (AICON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AISi, C-AI, W-Cu, or Ti.