Oxynitride Ceramic Wafer Table for High-Temperature Electrostatic Adsorption
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor manufacturing components require high corrosion resistance and high volume resistivity at elevated temperatures to withstand reactive halogen plasma and electrostatically adsorb wafers effectively.
Innovation Solution
A ceramic material comprising magnesium-aluminum oxynitride with a carbon content of 0.005 to 0.275 mass% is used, which enhances volume resistivity and corrosion resistance at high temperatures, incorporating an electrode and a heat-conductive substrate for efficient wafer handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If process temperature is increased to 500°C or more to form high-quality films, then film quality is improved, but electrostatic adsorption capability deteriorates due to reduced volume resistivity
Solution Approach 1:
The invention modifies the carbon content parameter of the ceramic substrate to maintain high volume resistivity even at elevated process temperatures of 500°C or more. This ensures that the electrostatic adsorption capability remains effective during high-temperature wafer processing while still allowing high-quality film formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ceramic material achieves sufficient corrosion resistance and high volume resistivity, reducing leakage currents and improving wafer adsorption and processing efficiency at high temperatures.
Implementation Method 1
the volume resistivity at high temperatures can be increased
Implementation Method 2
a highly heat-conductive substrate that is attached to a lower surface of the ceramic substrate and that has a higher heat conductivity than the ceramic substrate
Implementation Method 3
a resistance heating element that is disposed inside the highly heat-conductive substrate and under the electrode
Implementation Method 4
the ability to electrostatically adsorb a wafer at high temperatures
Data Source
AI summary
A ceramic material that has a high resistivity and high corrosion resistance according to the present invention contains magnesium-aluminum oxynitride and has a carbon content of 0.005 to 0.275 mass %.