Ozone Curing Module for Low-k Dielectric Film Stabilization
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Solution Overview
Problem
The shrinking feature sizes in semiconductor devices require low resistivity conductive materials and low dielectric constant insulation materials, but existing carbon-based dielectric layers are unstable and need stabilization through ozone curing and moisture treatment, which is not efficiently addressed by current semiconductor fabrication processes.
Innovation Solution
A substrate curing and treatment module with separate ozone-containing curing and water-vapor treatment chambers, capable of adjusting temperatures between 150° C to 200° C and 80° C to 100° C, respectively, to stabilize dielectric layers deposited using FCVD processes, ensuring effective curing and post-cure treatment of silicon-oxygen-carbon, silicon-oxygen-nitrogen, and silicon-oxygen-nitrogen-carbon containing layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If carbon-based dielectric layers are used to achieve low dielectric constant, then the dielectric constant is reduced below 3.0, but the film stability deteriorates and requires additional curing treatment
Solution Approach 1:
The patent applies parameter changes by transforming the chemical composition and physical state of the carbon-based dielectric layer through controlled thermal processing in ozone atmosphere. The curing process changes parameters such as cross-linking density, functional group composition, and molecular structure to convert the unstable as-deposited film into a stable cured film while maintaining the low dielectric constant property.
Solution Approach 2:
The patent uses ozone, a strong oxidant, to accelerate the curing process of carbon-based dielectric layers. The ozone atmosphere provides highly reactive oxygen species that rapidly oxidize and cross-link the carbon-containing polymer chains, achieving film stabilization and improved mechanical properties without requiring high temperatures that would compromise the low-k structure.
2Reliability
If separate curing and treatment chambers are used to stabilize dielectric layers, then the curing and treatment processes are optimized, but the device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the substrate processing into two distinct functional chambers: a curing chamber for ozone-based cross-linking and a treatment chamber for post-cure stabilization. This segmentation allows each chamber to be optimized for its specific function with dedicated gas delivery systems, heating zones, and process control parameters, achieving superior process optimization while managing complexity through functional separation.
Solution Approach 2:
The patent implements multi-functionality by designing a integrated module where a single substrate can sequentially undergo multiple processing steps (deposition, curing, treatment) in different chambers without removal. The module serves multiple functions: FCVD deposition, ozone curing, and moisture treatment, all within one integrated system that handles substrate transfer and process sequencing automatically.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The module effectively stabilizes dielectric layers, reducing instability and enhancing the properties of low dielectric constant films, thereby improving semiconductor device performance by reducing RC time delay, preventing cross-talk, and lowering power consumption.
Implementation Method 1
the deposited layer or layers may be cured at temperatures of about 150° C. to about 200° C. in an ozone-containing atmosphere
Implementation Method 2
the substrate may be transferred to the treatment chamber of the module an exposed to a water-vapor containing atmosphere at temperatures above the dew point (e.g., about 80° C. to about 100° C.) to form the treated dielectric film
Data Source
AI summary
A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.