Ozone Source Gas Impurity Detection for Thin Film Yield
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Solution Overview
Problem
Existing semiconductor fabrication processes face challenges in maintaining high production yields of thin films due to impurities such as carbon dioxide and inactive gases in the source gas, which can lead to deposition failures.
Innovation Solution
Incorporation of impurity detectors, including first and second impurity detectors, between the oxygen purifier and ozone supply, to detect and remove carbon dioxide and inactive gases in the source gas, ensuring the purity of the oxygen supply and preventing deposition failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If impurity detectors are added to detect inactive gases in the source gas, then the production yield of thin films is improved, but the device complexity increases
Solution Approach 1:
The impurity detectors are installed in the source gas supply line between the oxygen supply and ozone supply to detect inactive gases before the gas reaches the process chamber. This preliminary detection allows the system to identify impurities early in the process, preventing deposition failures before they occur and enabling timely intervention to maintain high production yield.
Solution Approach 2:
The impurity detectors serve as intermediary components that monitor the source gas quality without directly interfering with the deposition process. By placing detectors in the gas supply path, the system can detect impurities and trigger appropriate responses (such as purging or adjusting gas flow) without disrupting the overall fabrication process flow.
2Manufacturing precision
If multiple impurity detectors are installed to detect different impurities, then the manufacturing precision of thin films is improved, but the device complexity increases
Solution Approach 1:
The detection function is segmented into multiple specialized detectors: a first impurity detector for detecting carbon dioxide and a second impurity detector for detecting inactive gases. Each detector is optimized for specific impurity types, allowing the system to monitor and control different contaminants independently, thereby improving thin film manufacturing precision through targeted detection.
Solution Approach 2:
Different detection capabilities are applied at different locations in the gas supply system. The first impurity detector is positioned to detect carbon dioxide specifically, while the second impurity detector is positioned to detect inactive gases. This localized specialization of detection functions ensures that each type of impurity is monitored by the most appropriate detector, enhancing overall detection accuracy and film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of impurity detectors enhances the production yield of thin films by accurately detecting and removing impurities, thereby minimizing deposition failures and improving the overall fabrication process efficiency.
Implementation Method 1
a plurality of impurity detectors disposed between the oxygen supply and the ozone supply. The impurity detectors detect an inactive gas in the source gas.
Implementation Method 2
an oxygen purifier disposed between the oxygen supply and the ozone supply, where the oxygen purifier purifies the source gas
Data Source
AI summary
A semiconductor fabrication apparatus comprises a process chamber, an ozone supply that provides the process chamber with ozone, an oxygen supply that provides the ozone supply with a source gas of the ozone, and a plurality of impurity detectors disposed between the oxygen supply and the ozone supply. The impurity detectors detect an inactive gas in the source gas.