Ozone Gas Generation Apparatus Light-Blocking Plate
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Solution Overview
Problem
The existing methods for measuring C-V characteristics of silicon single crystal wafers using ozone gas oxidation result in thick silicon oxide films, which decrease measurement accuracy and damage the wafer surface due to exposure to ultraviolet light.
Innovation Solution
An ozone gas generation processing apparatus with a light-blocking plate that allows ozone gas to pass through while blocking ultraviolet rays, reducing ozone gas concentration and preventing wafer surface damage, is used to form a thinner silicon oxide film, thereby improving measurement accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a wafer is oxidized by ozone gas generated through ultraviolet irradiation in an oxygen atmosphere, then a silicon oxide film is formed on the wafer surface, but the silicon oxide film becomes too thick which decreases measurement accuracy
Solution Approach 1:
A light-blocking plate is introduced as an intermediary component between the ultraviolet light source and the wafer. This plate selectively transmits ozone gas while blocking ultraviolet rays, thereby controlling the oxidation process to form a thinner oxide film that does not compromise measurement accuracy
2Productivity
If ultraviolet rays are used to generate ozone gas for wafer oxidation, then oxidation processing can be performed, but the wafer surface is damaged by ultraviolet rays causing noise in C-V characteristics
Solution Approach 1:
The harmful ultraviolet rays are extracted or separated from the oxidation process by using a light-blocking plate that allows only ozone gas to reach the wafer surface, eliminating the damaging effect while preserving the beneficial oxidation function
Solution Approach 2:
The ultraviolet light is used indirectly to generate ozone gas in the atmosphere, and then the resulting ozone gas (without the harmful UV component) is used to oxidize the wafer surface, converting a harmful process into a beneficial one
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively reduces the thickness of the silicon oxide film and minimizes noise in C-V characteristics, enhancing the accuracy of repeated measurements to 0.5% or less.
Implementation Method 1
generates ozone gas by irradiating ultraviolet rays from the light source in an atmosphere containing oxygen
Implementation Method 2
a light-blocking plate that allows the generated ozone gas to pass therethrough and blocks the ultraviolet rays between the light source and the wafer
Implementation Method 3
When a silicon single crystal wafer is oxidized by ozone gas, a silicon oxide film is formed on the surface of the wafer
Data Source
AI summary
An ozone gas generation processing apparatus that includes a light source of ultraviolet rays and a wafer placement section, generates ozone gas by irradiating ultraviolet rays from the light source in an atmosphere containing oxygen, and processes a wafer on the wafer placement section with the ozone gas, the ozone gas generation processing apparatus comprising a light-blocking plate that allows the generated ozone gas to pass therethrough and blocks the ultraviolet rays between the light source and the wafer placed on the wafer placement section. An ozone gas generation processing apparatus and a method of forming an oxide film silicon film can make an adjustment to make thinner an oxide film formed on a wafer surface, the wafer surface is not damaged by ultraviolet rays when processed, and a method for evaluating a silicon single crystal wafer, obtaining a more stable measurement value of C-V characteristics are provided.