Ozone Lid Heating for Organic Film Removal Without Substrate Oxidation
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Solution Overview
Problem
Existing substrate processing methods using ozone processing often result in unintended oxidation of the substrate due to high temperatures, which can affect the desired shape or electrical characteristics of the product, while lowering the heating temperature compromises treatment efficiency.
Innovation Solution
A substrate processing method involving a substrate processing apparatus with a lid that is heated to a higher temperature than the substrate, allowing ozone gas to be introduced through a through-hole, which promotes radical generation for efficient organic film removal while suppressing substrate oxidation by maintaining a lower substrate temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is heated to high temperature (180°C or higher) during ozone processing, then the treatment efficiency and organic film removal rate are improved, but the substrate undergoes unintended oxidation that adversely affects product shape and electrical characteristics
Solution Approach 1:
The heating function is segmented between two separate components: the substrate placing unit heated to first temperature (lower, ≤150°C) and the lid heated to second temperature (higher, >150°C). This segmentation allows the gas in the processing space to be heated to high temperature for efficient organic film removal while the substrate itself remains at lower temperature to prevent oxidation.
Solution Approach 2:
Different temperature conditions are applied to different locations: the substrate area is maintained at lower temperature to protect from oxidation, while the lid and processing gas are heated to higher temperature to enhance treatment efficiency. This local quality differentiation resolves the contradiction between removal efficiency and substrate protection.
2Object-affected harmful factors
If the substrate temperature is lowered to prevent oxidation, then substrate integrity is maintained, but the treatment efficiency and organic film removal rate decrease
Solution Approach 1:
The lid acts as an intermediary heating element that transfers thermal energy to the processing gas without directly heating the substrate. The heated lid creates a high-temperature environment in the processing space that enhances organic film removal, while the substrate itself remains at lower temperature to prevent oxidation.
Solution Approach 2:
The temperature gradient is created in the vertical dimension: the substrate at the bottom is kept cool, while the lid at the top is heated. This dimensional separation of temperature zones allows simultaneous achievement of substrate protection and efficient treatment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses substrate oxidation while efficiently removing organic films, as demonstrated by experimental results showing increased removal rates and reduced substrate temperature, thus maintaining product integrity and efficiency.
Implementation Method 1
heating the lid to a second temperature higher than a first temperature... introducing a gas containing ozone into the space... promotes radical generation for efficient organic film removal
Implementation Method 2
strong oxidizing power of radicals formed when an ozone gas reaches a treatment target surface, and this oxidation reaction is promoted because the temperature of the treatment target object is a high temperature
Data Source
AI summary
A substrate processing method includes the steps of: a) placing a substrate having an organic film, on a placement surface of a substrate placing unit, such that the substrate is covered with a lid with a space interposed between the lid and the substrate; b) heating the lid to a second temperature higher than a first temperature while heating the placement surface of the substrate placing unit on which the substrate is placed, to the first temperature; and c) introducing a gas containing ozone into the space through the through-hole of the lid while performing the step of b).