Noble Metal Layer Formation Using Ozone Reaction Gas
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Solution Overview
Problem
The existing methods for forming noble metal layers, such as ruthenium and iridium, using CVD or ALD methods face challenges with low deposition rates and surface roughness due to high temperatures, which deteriorate underlying dielectric layers and hinder mass productivity.
Innovation Solution
The use of ozone (O3) as a reaction gas at controlled concentrations (approximately 20-100 g/m3) allows for a high reactivity process at lower temperatures (150-275°C), enhancing deposition rates and conformal characteristics, and enabling the formation of uniform noble metal layers with improved adhesive properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high temperature (500°C or higher) is used to achieve proper deposition results with ammonia or hydrogen as reaction gas, then adhesive property is improved, but the dielectric layer characteristics deteriorate and mass productivity decreases
Solution Approach 1:
The patent changes the reaction gas from ammonia or hydrogen to ozone, which fundamentally alters the deposition chemistry. This parameter change enables the decomposition of organic metal compounds at lower temperatures (avoiding dielectric layer damage) while still achieving proper noble metal layer formation and adhesive properties through ozone's highly reactive oxygen atoms.
2Object-affected harmful factors
If low temperature process is used with oxygen as reaction gas, then dielectric layer integrity is maintained, but incubation time becomes very long and deposition rate decreases
Solution Approach 1:
The patent employs ozone, a strong oxidant with highly reactive oxygen atoms, as the reaction gas. This enables rapid decomposition of the organic metal compound precursor at low temperatures, dramatically reducing incubation time and increasing deposition rate compared to molecular oxygen, while maintaining low temperature processing that preserves dielectric layer integrity.
3Object-affected harmful factors
If low temperature deposition is performed with oxygen as reaction gas, then dielectric layer is protected, but surface roughness increases and growth rate becomes slow
Solution Approach 1:
Ozone's highly reactive oxygen atoms enable complete and uniform oxidation of the organic metal compound at low temperatures, producing smooth, uniform noble metal layer surfaces. This avoids the surface roughness and slow growth rate problems associated with molecular oxygen at low temperatures, while still protecting the dielectric layer through low temperature processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a noble metal layer with a high deposition rate and conformal characteristics, suitable for use in DRAM and FeRAM, achieving sufficient mass productivity and maintaining the integrity of underlying dielectric layers, even in narrow trenches with high aspect ratios.
Implementation Method 1
using ozone (O3) as a reaction gas... The reaction gas is used to decompose the organic metal compound
Implementation Method 2
using ozone (O3) as a reaction gas... high reactivity process... enhancing deposition rates
Data Source
AI summary
A noble metal layer is formed using ozone (O3) as a reaction gas.