P-type Amorphous Oxide Semiconductor Gallium Composition
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Solution Overview
Problem
Current technologies face challenges in developing p-type amorphous oxide semiconductors for transparent electronic devices and solar cells due to difficulties in achieving high mobility and low-cost manufacturing, particularly in forming p-type materials with low temperature processes, and the limitations of existing hole transporting layers in organic solar cells.
Innovation Solution
A p-type oxide semiconductor is developed using gallium combined with components like CuS, SnO, ITO, IZTO, and IZO, manufactured through a solution process, allowing for low-cost, low-temperature production of amorphous thin films with high mobility, and utilized as a hole transporting layer in solar cells to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional a-Si based TFT is used for transparent display, then manufacturing cost is reduced, but mobility is low and threshold voltage varies by bias stress
Solution Approach 1:
The patent changes the material composition parameters by incorporating gallium (Ga) into the oxide semiconductor structure, forming a specific compositional range (Formula: In1-x-yGaxZnyO3-z) that achieves both low-cost manufacturing and stable electrical characteristics without requiring complex vacuum processes
Solution Approach 2:
The patent creates a composite oxide semiconductor material combining indium, gallium, zinc, and oxygen in specific ratios, achieving synergistic effects that provide high mobility, stable threshold voltage, and transparency while maintaining compatibility with low-cost solution processes
2Reliability
If excimer laser annealing ELA p-Si based TFT is used, then mobility is improved and threshold voltage variation is reduced, but homogeneity is deteriorated when polycrystalline structure is formed
Solution Approach 1:
The patent maintains an amorphous structure by controlling the compositional parameters and avoiding laser annealing, achieving homogeneous properties throughout the film while maintaining high mobility through the specific In-Ga-Zn-O composition ratio
Solution Approach 2:
The patent replaces expensive excimer laser annealing equipment with simple solution coating processes, achieving comparable or superior performance without the equipment cost and homogeneity issues associated with polycrystalline formation
3Reliability
If n-type oxide semiconductor is used, then high mobility is achieved, but p-type doping is difficult and CMOS type device cannot be implemented
Solution Approach 1:
The patent changes the chemical composition parameters by introducing gallium and zinc into the oxide semiconductor structure, which fundamentally alters the electronic band structure and defect chemistry, enabling p-type doping through simple solution processes without requiring complex vacuum-based techniques
4Temperature
If vacuum process is used for manufacturing oxide semiconductor, then low temperature procedure is realized, but apparatus cost is expensive
Solution Approach 1:
The patent replaces vacuum-based mechanical deposition systems with solution-based chemical deposition methods, achieving low-temperature processing through simple spin-coating or inkjet printing techniques that use ambient or mildly heated environments, eliminating the need for expensive vacuum equipment
Solution Approach 2:
The patent uses inexpensive solution-based precursors and simple coating equipment instead of expensive vacuum deposition systems, achieving comparable film quality at much lower equipment and material costs through readily available chemical solutions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of high-performance solar cells with improved charge mobility and reduced manufacturing costs, overcoming the limitations of existing p-type semiconductor materials and hole transporting layers, while maintaining low surface roughness and flexibility.
Implementation Method 1
p-type amorphous oxide semiconductor including gallium... high mobility... charge mobility
Implementation Method 2
solution process... spin coating or an inkjet printing... low temperature procedure
Data Source
AI summary
a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the solar cell are disclosed. The p-type oxide semiconductor where gallium (Ga) is further combined with combination of one or more components selected from a group of CuS, SnO, ITO, IZTO, IGZO and IZO is provided.