P-Type Gallium Oxide Film via M-N Co-Doping for Stable Hole Transport
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The preparation of p-type gallium oxide films is hindered by low solubility and stability of nitrogen acceptors, leading to poor p-type conductivity and stability, which limits their application in high-voltage and high-power semiconductor devices.
Innovation Solution
A method involving the preparation of a MxGa1-xN target material, where M is selected from Al, Sc, In, Y, or Lu, using physical vapor deposition to obtain MxGa1-xN clusters, which are then oxidized to form N-doped p-type gallium oxide films, enhancing solubility and stability by adjusting oxygen pressure and optimizing N content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If nitrogen acceptors are used for p-type doping in gallium oxide, then hole carrier concentration can be achieved, but solubility and stability of N acceptors are poor
Solution Approach 1:
The patent introduces an intermediary element (Al, Sc, In, Y, or Lu) that mediates between the nitrogen acceptors and the gallium oxide lattice. This intermediary element serves as a bridge to improve the solubility and stability of nitrogen acceptors while maintaining the p-type conductivity and hole carrier concentration. The intermediary element facilitates the incorporation of nitrogen into the gallium oxide structure without causing instability.
Solution Approach 2:
The patent creates a composite material system by combining nitrogen acceptors with intermediary elements (Al, Sc, In, Y, or Lu) within the gallium oxide lattice. This composite approach allows the nitrogen to maintain its acceptor function while the intermediary element provides structural stability and enhanced solubility. The composite structure resolves the contradiction between achieving high hole carrier concentration and maintaining nitrogen acceptor stability.
2Reliability
If nitrogen acceptors are doped into gallium oxide, then p-type conductivity can be achieved, but solubility of N acceptors is low
Solution Approach 1:
The intermediary element (Al, Sc, In, Y, or Lu) acts as a mediator that enhances the solubility of nitrogen acceptors in the gallium oxide lattice. By incorporating this intermediary element, the patent enables higher concentrations of nitrogen acceptors to be dissolved into the gallium oxide structure while maintaining p-type conductivity. The intermediary element facilitates this solubility enhancement without compromising the electrical properties.
Solution Approach 2:
The patent changes the compositional parameters of the gallium oxide lattice by introducing intermediary elements (Al, Sc, In, Y, or Lu) with different atomic sizes and chemical properties. This parameter change modifies the lattice structure to accommodate nitrogen acceptors more effectively, thereby increasing their solubility while preserving the p-type conductivity necessary for electronic device applications.
3Reliability
If self-trapping of hole carriers occurs, then charge neutrality can be maintained, but p-type doping efficiency is reduced
Solution Approach 1:
The intermediary element (Al, Sc, In, Y, or Lu) serves as a mediator that prevents self-trapping of hole carriers by modifying the local electronic structure and potential landscape within the gallium oxide lattice. This intermediary element creates more favorable conditions for hole carrier mobility and reduces the tendency toward self-trapping, thereby improving p-type doping efficiency while maintaining charge neutrality through the nitrogen acceptor doping mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in high-quality p-type gallium oxide films with high hole carrier concentration and stability, suitable for ultra-wide bandgap semiconductor devices, promoting their application in solar-blind ultraviolet detection and high-power electronics.
Implementation Method 1
subjecting the MxGa1-x N target material to ablation, sputtering or thermal evaporation by physical vapor deposition to obtain MxGa1-xN clusters
Implementation Method 2
oxidizing the MxGa1-xN clusters with oxygen to grow a N-doped p-type gallium oxide film on the substrate
Implementation Method 3
The MxGa1-xN target material is ablated by the pulsed laser deposition to obtain the MxGa1-xN clusters
Data Source
AI summary
A method for preparing a p-type gallium oxide film is provided. An MxGa1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain MxGa1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The MxGa1-xN clusters are oxidized by O2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The MxGa1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.