P-Type GaN Nitride Layer With Hydrogen Gradient for Higher Hole Concentration
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Solution Overview
Problem
The challenge of achieving high hole concentrations in p-type doped GaN-based semiconductor devices is hindered by the formation of stable Mg—H complexes, which limits the electrical properties and applications of these devices.
Innovation Solution
A hydrogen absorption layer is formed on the p-type doped nitride-based semiconductor layer to absorb hydrogen, thereby decrementally decreasing the hydrogen concentration and activating more p-type dopants, leading to improved hole concentration and better electrical contact with electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If hydrogen gas is used as carrier gas during the formation of p-type doped GaN, then the manufacturing process is simplified and feasible, but hydrogen forms stable Mg-H complexes with p-type dopants, passivating them and reducing hole concentration
Solution Approach 1:
The patent applies preliminary action by forming the p-type doped GaN layer with hydrogen present during manufacturing, then subsequently removing the hydrogen after the layer is formed. This allows the doping process to proceed feasibly with hydrogen as carrier gas, while then eliminating the harmful Mg-H complexes in a second step, thus resolving the contradiction between manufacturing ease and electrical property reliability
Solution Approach 2:
The patent extracts the harmful hydrogen from the p-type doped GaN layer after it has been formed. By removing hydrogen from the completed layer, the Mg-H complexes are eliminated, allowing the p-type dopants to become active and improve the electrical properties while maintaining the manufacturing simplicity of using hydrogen during the doping process
2Ease of manufacture
If uniform hydrogen concentration is maintained in p-type doped GaN layer, then manufacturing process is simple, but hole concentration distribution is poor and electrical properties are limited
Solution Approach 1:
The patent uses uniform hydrogen distribution during the doping process for simplicity, then subsequently creates a non-uniform hydrogen concentration profile by removing hydrogen from specific regions or at different rates. This preliminary uniform doping followed by selective hydrogen removal enables both manufacturing simplicity and improved hole concentration distribution
Solution Approach 2:
The patent applies local quality by creating different hydrogen concentration levels in different regions of the p-type doped GaN layer. By having varying hydrogen concentrations across the layer thickness or lateral dimensions, the hole concentration can be optimized in specific regions, improving overall electrical properties while maintaining relatively simple manufacturing processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances hole concentration and improves electrical contact between the p-type doped nitride-based semiconductor layer and electrodes, resulting in better performance of high-electron-mobility transistors (HEMTs) and high-hole-mobility transistors (HHMTs).
Implementation Method 1
A hydrogen absorption layer is formed above the blanket p-type doped nitride-based semiconductor layer. A process temperature varies such that hydrogen in the blanket p-type doped nitride-based semiconductor layer is absorbed by the hydrogen absorption layer.
Data Source
AI summary
A semiconductor device includes a first and a second nitride-based semiconductor layers, a first p-type doped nitride-based semiconductor layer, a first and a second electrodes. The first p-type doped nitride-based semiconductor layer is disposed above the second nitride-based semiconductor layer and has a bottom surface in contact with the second nitride-based semiconductor layer. The first p-type doped nitride-based semiconductor layer has a hydrogen concentration which decrementally decreases along a direction pointing from the bottom surface toward a top surface of the first p-type doped nitride-based semiconductor layer. The first electrode is disposed on the first p-type doped nitride-based semiconductor layer and in contact with the top surface of the first p-type doped nitride-based semiconductor layer. The second electrode is disposed above the second nitride-based semiconductor layer to define a drift region.