P-Type IGZO Semiconductor via Ca Mg Cu Doping
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Solution Overview
Problem
Current transparent indium gallium zinc oxide (IGZO)-based metal oxide semiconductor materials are primarily n-type, limiting their applications in transparent devices such as smart windows and light-emitting diodes, and there is a need for a p-type variant with improved hole carrier concentration and mobility.
Innovation Solution
A p-type metal oxide semiconductor material with the formula In1−xGa1−yMx+yZnO4+m, where M is Ca, Mg, or Cu, is developed by doping IGZO with these elements using a soft chemistry process, shifting the Fermi level to the valence band and achieving a hole carrier concentration range of 1×10^15 to 6×10^19 cm^-3.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If transparent IGZO-based metal oxide semiconductor materials are used, then transparency and carrier mobility are improved, but the material type is limited to n-type only
Solution Approach 1:
The patent changes the chemical composition parameters of IGZO by doping with Ca, Mg, or Cu elements at specific concentration ranges (0.01-0.1 atomic ratio), which transforms the material from n-type to p-type while maintaining transparency and semiconductor properties
Solution Approach 2:
The patent creates composite material structures by combining IGZO base material with dopant elements (Ca, Mg, Cu) to form doped IGZO compounds with formula In1-x-yMxGa1-yZnO4+m, achieving new material types with both p-type characteristics and transparency
2Quantity of substance
If doping elements Ca, Mg, or Cu are added to IGZO, then hole carrier concentration is improved, but material composition complexity increases
Solution Approach 1:
The patent optimizes dopant concentration parameters within specific ranges (0.01-0.1 atomic ratio of M to In+Ga) to achieve sufficient hole carrier concentration (1×10^15 to 6×10^19 cm^-3) while avoiding excessive complexity in material composition
3Adaptability or versatility
If p-type transparent IGZO-based metal oxide semiconductor material is developed, then application range is expanded, but manufacturing difficulty increases
Solution Approach 1:
The patent establishes specific synthesis parameter ranges including dopant concentrations (0.01-0.1 atomic ratio), sintering temperatures (900-1100°C), and oxygen partial pressures (0.1-1 atm) that enable reliable p-type material formation through conventional ceramic processing techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting p-type IGZO-based materials exhibit suitable electrical properties, including hole carrier concentrations and mobilities, enabling their use in transparent displays, field-effect transistors, and integrated circuit semiconductor devices.
Implementation Method 1
A p-type metal oxide semiconductor material having the following formula: In1−xGa1−yMx+yZnO4+m, wherein M is Ca, Mg, or Cu
Implementation Method 2
shifting the Fermi level to the valence band and achieving a hole carrier concentration range of 1×10^15 to 6×10^19 cm^-3
Data Source
AI summary
The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula:In1−xGa1−yMx+yZnO4+m,wherein M is Ca, Mg, or Cu, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm−3.