P-Type Oxide Semiconductor Shield for Ga2O3 Leakage
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Solution Overview
Problem
Current methods for manufacturing p-type oxide semiconductors, such as those using Rh2O3 or ZnRh2O4, face challenges like low raw material density, difficulty in producing single crystals, and poor electrical characteristics, making it hard to achieve high mobility and suitable band gaps for applications in LEDs and power devices.
Innovation Solution
A semiconductor apparatus is developed with a crystalline p-type oxide semiconductor film embedded deeper than the gate electrode in an n-type semiconductor layer, utilizing metal oxides like Ir2O3 or Ga2O3, which reduces leakage current and maintains excellent semiconductor properties, even at high voltages with high dielectric breakdown electric field strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional methods like FZ or MBE are used to manufacture p-type semiconductors, then substrate preparation is possible, but manufacturing difficulty increases and successful production is virtually impossible
Solution Approach 1:
The invention changes the manufacturing approach from conventional FZ or MBE methods to a spray drying method using organic solvents. This parameter change in the manufacturing process enables successful production of p-type oxide semiconductor crystals while maintaining manufacturing feasibility.
Solution Approach 2:
The invention uses organic solvents as a disposable medium in the spray drying process. The organic solvent evaporates during heating, leaving behind the p-type oxide semiconductor crystals. This approach simplifies the manufacturing process compared to conventional methods requiring complex substrate preparation.
2Ease of manufacture
If Rh2O3 is used for p-type semiconductors, then deposition is possible, but raw material density is thin and affects deposition quality
Solution Approach 1:
The invention uses composite material formulations in the organic solvent, combining metal salts with appropriate solvents and additives. This composite approach ensures proper raw material density and uniform deposition, overcoming the limitations of using pure Rh2O3 or other conventional materials.
3Ease of manufacture
If ZnRh2O4 is used for p-type semiconductors, then deposition is possible, but mobility is low and band gap is narrow reducing applicability
Solution Approach 1:
The invention changes the material composition parameters by using p-type oxide semiconductors with optimized metal ratios and oxidation states. This enables achieving high mobility and wide band gap characteristics necessary for LED and power device applications, unlike ZnRh2O4 which has limited performance.
4Ease of manufacture
If delafossite or oxychalcogenide are used as p-type semiconductors, then material formation is possible, but mobility is about 1 cm2/V·s or less and electrical characteristics are poor
Solution Approach 1:
The invention employs composite oxide semiconductor materials with optimized compositions, combining multiple metal elements in specific ratios. This composite structure achieves high carrier mobility and excellent electrical characteristics, overcoming the poor performance of delafossite and oxychalcogenide materials.
5Adaptability or versatility
If Ir2O3 is used as p-type semiconductor, then new application is explored, but manufacturing method needs to be established
Solution Approach 1:
The invention uses organic solvents as a disposable medium in the spray drying process for Ir2O3-based p-type oxide semiconductors. The organic solvent evaporates during heating, leaving behind high-quality Ir2O3 crystals. This approach establishes a simple manufacturing method that was previously unavailable for Ir2O3.
Solution Approach 2:
The invention changes the manufacturing parameters by using spray drying with organic solvents instead of conventional methods. This enables successful production of Ir2O3-based p-type semiconductors with controlled crystal growth and composition, establishing a viable manufacturing route for this versatile material.
Data Source
AI summary
A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.