Power Amplifier Local Temperature Sensing for Thermal Runaway

The patent implements temperature sensors that monitor temperature before thermal runaway occurs, and a bias circuit that proactively adjusts bias current based on temperature differences. This preliminary detection and adjustment prevents the collector voltage and current density from exceeding breakdown limits, allowing high power operation while maintaining device reliability.

The patent uses temperature sensors to continuously monitor temperature at different portions of the power amplifier, feeds this information to a comparator that determines temperature differences, and adjusts bias current accordingly. This feedback loop enables high power operation while preventing thermal runaway and device damage through real-time monitoring and adjustment.

The patent divides the power amplifier into multiple portions and places temperature sensors at specific locations (between sets of devices in arrays) to monitor temperature differences. This segmented approach provides effective thermal runaway protection by comparing temperatures at different locations, while avoiding the need for comprehensive monitoring of every component, thus managing device complexity.

The patent implements temperature monitoring at specific critical locations within the power amplifier rather than uniformly across all components. Temperature sensors are positioned between sets of devices in arrays to detect local temperature differences that indicate thermal runaway conditions. This localized monitoring approach provides effective protection while minimizing the number of sensors and overall system complexity.