Semiconductor Package Capacitor Layout With Scribe-Line Through Via
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Solution Overview
Problem
Existing semiconductor package structures are inadequate in minimizing space usage by capacitor structures, leading to IR-related issues due to their larger physical dimensions compared to other electronic components.
Innovation Solution
Incorporation of a through via in the scribe line region within the capacitor structure, which electrically couples redistribution layers, reducing the route of electrical signals and allowing for additional paths without increasing the capacitor's volume or reducing capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If capacitor structures are made larger to provide sufficient capacitance, then capacitance is improved, but area occupied increases leading to IR-related issues
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional stacked capacitor structures with multiple layers. The first and second capacitor structures are positioned at different vertical levels and connected through through-silicon vias (TSVs), effectively utilizing the vertical dimension to increase capacitance without expanding the horizontal footprint on the substrate.
Solution Approach 2:
The patent implements nested capacitor structures where one capacitor is positioned within or adjacent to another capacitor structure in the vertical dimension. The first capacitor structure with its electrodes and dielectric layers is nested together with the second capacitor structure, forming a compact stacked arrangement that maximizes capacitance density within a small area.
2Quantity of substance
If capacitor structures are made larger to provide sufficient capacitance, then capacitance is improved, but IR-related issues worsen
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional stacked capacitor structures with multiple layers. The first and second capacitor structures are positioned at different vertical levels and connected through through-silicon vias (TSVs), effectively utilizing the vertical dimension to increase capacitance without expanding the horizontal footprint on the substrate.
Solution Approach 2:
The patent implements nested capacitor structures where one capacitor is positioned within or adjacent to another capacitor structure in the vertical dimension. The first capacitor structure with its electrodes and dielectric layers is nested together with the second capacitor structure, forming a compact stacked arrangement that maximizes capacitance density within a small area.
3Reliability
If through vias are added in scribe line regions, then electrical connection and signal paths are improved, but device complexity increases
Solution Approach 1:
The scribe line regions, which traditionally serve only as separation areas between devices, are given multiple functions: they continue to separate adjacent capacitor structures while simultaneously housing through vias that provide electrical interconnections between different capacitor layers. This multi-functional use of scribe lines reduces the need for additional dedicated interconnection structures.
Solution Approach 2:
The through vias positioned in the scribe line regions act as intermediary connection elements that bridge the electrical connection between the first and second capacitor structures. By placing these vias in the scribe lines rather than within the capacitor structures themselves, the patent provides a clean intermediary pathway for electrical signals without complicating the internal structure of the capacitors.
Data Source
AI summary
A semiconductor package structure includes a first redistribution layer, a capacitor structure, and a second redistribution layer. The capacitor structure is disposed over the first redistribution layer and includes a semiconductor substrate, a first capacitor cell, a second capacitor cell, and a through via. The first capacitor cell and the second capacitor cell are disposed over the semiconductor substrate and separated by a first scribe line region. The through via is disposed in the first scribe line region. The second redistribution layer is disposed over the capacitor structure and is electrically coupled to the first redistribution layer through the through via.