Semiconductor Package Structure to Reduce Delamination and Warping
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Solution Overview
Problem
The semiconductor industry faces challenges in preventing delamination during the fabrication process of packages, which affects the reliability and integrity of the final product.
Innovation Solution
A fabrication method involving a first molding compound layer with conductive vias and a redistribution structure, where the semiconductor devices are disposed on opposite sides of the first molding compound layer, and a second molding compound layer encapsulates the devices, using inorganic fillers to optimize thermal expansion and Young's modulus, thereby enhancing structural integrity and reducing delamination risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional packaging materials and methods are used, then manufacturing simplicity is maintained, but delamination occurs during fabrication reducing reliability
Solution Approach 1:
The patent applies composite materials by form a molding compound layer containing an inorganic filler layer. The inorganic filler layer is integrated within the molding compound structure, creating a composite material system that combines organic molding compound with inorganic fillers. This composite structure enhances mechanical strength and thermal stability while preventing delamination during fabrication processes.
Solution Approach 2:
The patent applies parameter changes by modifying the physical and chemical properties of the molding compound through the addition of inorganic fillers. The inorganic filler layer changes parameters such as coefficient of thermal expansion, Young's modulus, and glass transition temperature of the molding compound, thereby improving reliability without significantly complicating the manufacturing process.
2Strength
If standard molding compounds are used, then ease of manufacture is maintained, but warping and delamination occur reducing structural integrity
Solution Approach 1:
The patent forms a molding compound layer with an integrated inorganic filler layer, creating a composite structure that enhances structural integrity. The inorganic filler provides mechanical reinforcement and dimensional stability, preventing warping during fabrication while maintaining compatibility with existing manufacturing processes.
Solution Approach 2:
The patent applies local quality by placing the inorganic filler layer specifically within the molding compound structure where it is most needed for preventing delamination and warping. This targeted approach strengthens critical areas without requiring complete redesign of the entire manufacturing process.
3Reliability
If simple packaging structures are used, then manufacturing simplicity is maintained, but thermal management and electrical connection stability deteriorate
Solution Approach 1:
The patent forms a molding compound layer containing an inorganic filler layer, creating a composite material that provides both mechanical support and stable electrical connections. The inorganic filler enhances the molding compound's ability to maintain electrical connection stability while managing thermal expansion, without requiring complex multi-layer structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the structural integrity and reliability of semiconductor packages by reducing delamination and warping issues, ensuring stable electrical connections and thermal management.
Implementation Method 1
using inorganic fillers to optimize thermal expansion and Young's modulus
Implementation Method 2
optimize thermal expansion and Young's modulus
Data Source
AI summary
A package includes a first molding compound layer, a conductive via embedded in the first molding compound layer, a semiconductor device, a redistribution structure and a second molding compound layer. The semiconductor device and the redistribution structure are respectively disposed on opposite sides of the first molding compound layer, wherein the semiconductor device is electrically connected to the redistribution structure through the conductive via. The second molding compound layer is disposed on the first molding compound layer, wherein the semiconductor device is encapsulated by the second molding compound layer.


