Semiconductor Package Dummy Component for Heat Dissipation

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Solution Overview

Problem

As integrated circuits become more densely packed and operate at higher speeds, the demand for effective heat dissipation increases, posing a challenge for existing technologies to efficiently manage the rising heat generation within compact semiconductor packages.

Innovation Solution

The formation of thermally conductive through-substrate vias (TSVs) and inclusion of thermally conductive features like metal lines and vias in a dummy component within the package, which enhances heat dissipation by providing efficient thermal pathways.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If integrated circuits are compacted into smaller areas to increase integration density, then the integration level and circuit density improve, but heat dissipation becomes more difficult and thermal management becomes more demanding

Engineering Contradiction:
Improveintegration densityVSAvoidheat dissipation
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent segments the substrate into multiple regions with different thermal conductivities. High thermal conductivity regions (first regions) are created to conduct heat away from hot spots, while low thermal conductivity regions (second regions) are maintained for electrical isolation. This segmentation allows the substrate to simultaneously achieve high integration density and effective heat dissipation by creating dedicated thermal pathways without compromising circuit functionality.

Inventive Principle:
Principle #1Segmentation

2Speed

If driving currents are increased to improve circuit speed, then the operating speed improves, but heat generation increases and becomes more demanding to manage

Engineering Contradiction:
Improvecircuit speedVSAvoidheat generation
Core Design Contradiction:
SpeedVSLoss of energy

Solution Approach 1:

The patent introduces an intermediary thermal management structure between the heat-generating circuits and the substrate. This includes forming high thermal conductivity regions that act as thermal pathways, and potentially thermal interface materials or heat spreaders that mediate heat transfer. These intermediary structures enable high-speed operation by providing dedicated routes for heat removal, allowing the circuits to operate at higher currents without excessive temperature rise.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Quantity of substance

If more devices are compacted into smaller areas, then the device density improves, but the thermal pathways become insufficient and heat dissipation efficiency decreases

Engineering Contradiction:
Improvedevice densityVSAvoidheat dissipation efficiency
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies local quality by creating regions with different thermal conductivities in specific locations throughout the substrate. High thermal conductivity regions are strategically placed beneath heat-generating devices to provide localized heat removal pathways. This allows the substrate to maintain high device density while ensuring that each device has access to adequate thermal management, thereby preserving heat dissipation efficiency despite increased overall density.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly improves heat dissipation capabilities, ensuring the thermal performance and reliability of semiconductor packages as they become more integrated and high-speed.

Implementation Method 1

thermally conductive through-substrate vias (TSVs) and inclusion of thermally conductive features like metal lines and vias in a dummy component within the package, which enhances heat dissipation by providing efficient thermal pathways

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250105084A1Semiconductor package and method of forming the same
Publication Date: 2025.03.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250105084A1 patent drawing
  • US20250105084A1 patent drawing
  • US20250105084A1 patent drawing

AI summary

A method includes forming a dummy component, including: forming through-substrate vias (TSVs) in a substrate; forming a thermal structure over the TSVs, wherein the thermal structure includes metal lines in dielectric layers; forming a bonding layer over the thermal structure; and forming bond pads within the bonding layer; bonding the dummy component to a package component; and bonding a semiconductor die to the package component.