Semiconductor Package ESD Testing Using Breakdown Voltage Pads
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Solution Overview
Problem
High-voltage static electricity or noise, known as electrostatic discharge (ESD), can damage semiconductor packages during the fabrication process, leading to performance degradation or failures, as existing technologies fail to effectively test and mitigate ESD accumulation in integrated fan-out (InFO) packages.
Innovation Solution
A method involving the use of charge receiving and measurement units, with distinct breakdown voltage settings, is implemented to test and manage ESD by forming dielectric and metallization layers, allowing for the determination of appropriate ESD protection circuit specifications to prevent charge accumulation and damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing testing technologies are used, then the testing process is simple, but ESD accumulation cannot be effectively detected and mitigated
Solution Approach 1:
The patent applies preliminary action by forming charge measurement units and charge receiving units during the fabrication process before the semiconductor package is completed. These units are prepared in advance with specific breakdown voltage characteristics, allowing ESD detection to be performed early in the manufacturing process rather than requiring complex post-fabrication testing equipment.
Solution Approach 2:
The patent introduces charge measurement units and charge receiving units as intermediary structures that facilitate ESD detection. These units act as mediators between the fabrication process and the final product testing, providing a simplified interface for measuring charge accumulation without requiring complex external testing equipment.
2Measurement precision
If charge measurement units with different breakdown voltages are used, then ESD protection circuit specifications can be determined, but the fabrication process becomes more complex
Solution Approach 1:
The patent applies parameter changes by utilizing charge measurement units with different breakdown voltage characteristics. By varying the breakdown voltage parameter of the measurement units, the system can detect different levels of charge accumulation and determine appropriate ESD protection specifications. This allows precise ESD measurement while integrating the functionality into the standard fabrication process flow.
3Reliability
If ESD testing is performed during fabrication, then charge accumulation can be detected early, but additional testing steps are required
Solution Approach 1:
The patent merges ESD testing functionality with the existing fabrication process by forming charge measurement units and charge receiving units as integral parts of the semiconductor package structure. The testing steps are combined with the fabrication steps, allowing ESD detection to be performed during the manufacturing process rather than as a separate post-fabrication operation, thereby maintaining fabrication efficiency while enabling early damage prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective testing and prevention of ESD-induced damage in InFO packages by determining the necessary ESD protection circuit specifications, ensuring the semiconductor package operates within safe voltage limits, thereby preventing performance degradation.
Implementation Method 1
forming a first metallization layer over the first dielectric layer, wherein the first metallization layer includes a first conductive pad electrically connected to the charge measurement unit and the charge receiving unit, wherein the forming of the first metallization layer induces first charges to accumulate on the charge measurement unit or charge receiving unit
Data Source
AI summary
A method of testing a semiconductor package is provided. The method includes forming a first metallization layer, wherein the first metallization layer includes a first conductive pad electrically connected to a charge measurement unit and a charge receiving unit; performing a first test against the charge measurement unit through the first conductive pad to determine whether breakdown occurs in the charge measurement unit; and in response to determining that no breakdown occurs in the charge measurement unit, forming a second dielectric layer over the first metallization layer, wherein a portion of the first conductive pad is exposed from the second dielectric layer.