Semiconductor Package Ground Connection for EMI Shield Continuity
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Solution Overview
Problem
Semiconductor packages face issues with unreliable electromagnetic interference (EMI) shielding due to discontinuities and unintended electrical connections, primarily caused by step coverage limitations and excessive metallic material deposition, leading to increased processing time and cost.
Innovation Solution
The formation of ground connections at the sidewall or top surfaces of semiconductor device assemblies using sacrificial conductive components, such as bond wires, which connect to EMI shields, reducing the need for thick metallic deposits and minimizing the risk of shorts or opens.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If excessive metallic material is deposited to avoid unreliable connections, then connection reliability improves, but unintended electrical connections occur between metallic layers and non-ground nodes
Solution Approach 1:
The ground connection structure is segmented into distinct regions: ground nodes are separated from non-ground nodes by spacing structures, and the metallic layer is divided into first and second portions that are electrically isolated from each other. This segmentation prevents unintended electrical connections while maintaining reliable ground connections.
Solution Approach 2:
The metallic layer has different properties in different regions: the first portion directly contacts ground nodes with high electrical conductivity, while the second portion is spaced from non-ground nodes to prevent unintended connections. The spacing structures create local electrical isolation where needed, allowing the metallic layer to provide reliable grounding without causing harmful unintended connections.
2Object-affected harmful factors
If metallic layers are formed to shield electromagnetic interference, then EMI shielding effectiveness improves, but discontinuities occur in connections between metallic layers and ground nodes
Solution Approach 1:
Ground nodes are预先 positioned and electrically connected to the substrate before forming the metallic EMI shielding layer. The spacing structures are also prepared in advance to define where the metallic layer should be electrically isolated from non-ground nodes. This preliminary arrangement ensures that when the metallic layer is deposited, continuous reliable connections to ground nodes are maintained without discontinuities.
3Reliability
If thick metallic deposits are used to ensure reliable connections, then connection reliability improves, but processing time and cost increase
Solution Approach 1:
The metallic layer thickness is optimized locally: it can be thinner in regions spaced from non-ground nodes where full thickness is not needed for isolation, while maintaining adequate thickness only where ground connections are required. This local optimization reduces overall material usage and processing time while preserving connection reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances electrical reliability by reducing incidents of undesired shorts or opens, lowers processing costs, and improves yield by allowing for thinner EMI shield deposits while maintaining effective shielding.
Implementation Method 1
a conductive shield configured to connect to the exposed portion of the conductive component
Data Source
AI summary
Semiconductor device assemblies with improved ground connections, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly may include one or more semiconductor dies mounted on an upper surface of a package substrate. Further, the package substrate includes a bond pad disposed on the upper surface, which may be designated as a ground node for the semiconductor device assembly. The bond pad may be electrically connected to an electromagnetic interference (EMI) shield of the semiconductor device assembly through a conductive component attached to the bond pad and configured to be in contact with the EMI shield at a sidewall surface or a top surface of the semiconductor device assembly, thereby forming the ground connection. Such ground connection may reduce a processing time to form the EMI shield while improving yield and reliability performance of the semiconductor device assemblies.