Semiconductor Package Half-Groove for Sputtering Residue Isolation
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Solution Overview
Problem
Conventional semiconductor packages face contamination issues due to metal residues accumulating in gaps between the encapsulation layer and the carrier during the formation of the heat-dissipation layer, which degrades package quality and yield.
Innovation Solution
A semiconductor package design featuring a half groove on the encapsulation layer that creates a sheltering space between the encapsulation layer and the carrier, preventing metal residues from accumulating and contaminating the die during the formation of the heat-dissipation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heat-dissipation layer is formed on the encapsulation layer through sputtering process, then heat dissipation performance is improved, but metal residues accumulate in the gap between the encapsulation layer and carrier causing contamination
Solution Approach 1:
A groove is formed on the encapsulation layer before the sputtering process to create a sheltering space. This preliminary structural modification prevents metal residues from accumulating in the gap between the encapsulation layer and carrier during subsequent heat-dissipation layer formation, thereby eliminating contamination while maintaining heat dissipation performance.
Solution Approach 2:
The groove acts as an intermediary structure that modifies the space between the encapsulation layer and carrier. By introducing this intermediate feature, the patent creates a sheltering space that redirects spattering target atoms away from the gap area, preventing metal residue accumulation without interfering with the heat-dissipation function.
2Ease of manufacture
If the gap between encapsulation layer and carrier is left open, then manufacturing process is simple, but metal residues can accumulate and contaminate the die
Solution Approach 1:
The encapsulation layer is segmented by forming a groove that divides the surface into different regions. This segmentation creates a sheltering space that prevents metal residues from accumulating in the gap area, thereby eliminating contamination risk while maintaining manufacturing simplicity as the groove formation is integrated into the existing process flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The half groove effectively prevents metal residues from accumulating, thereby maintaining the quality and yield of the semiconductor package by isolating the gap between the encapsulation layer and the carrier.
Implementation Method 1
a heat-dissipation layer 13 is formed on a second surface 12b of the encapsulation layer
Implementation Method 2
a heat-dissipation layer 13 is formed on a second surface 12b of the encapsulation layer through sputtering process
Data Source
Figure 1~2
Figure 3~4
Figure 5A~5B
AI summary
In a method of manufacturing a semiconductor package, a half groove (125) is formed between a first surface (121) and a lateral surface (123) of an encapsulation layer (150), the first surface of the encapsulation layer is adhered on a carrier (T3) such that the half groove becomes a sheltering space located between the encapsulation layer and the carrier, then a heat-dissipation layer (130) is formed on a second surface (122) of the encapsulation layer to obtain a semiconductor package. During formation of the heat-dissipation layer, the sheltering space can avoid metal residues from accumulating in a gap between the carrier and the first surface of the encapsulation layer to contaminate the semiconductor package.