Semiconductor Package Interconnect Layout for Warpage Reduction
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Solution Overview
Problem
Semiconductor device packages face performance and efficiency issues due to wafer warpage caused by mismatched coefficients of thermal expansion between semiconductor devices and package bodies, leading to thickness-related challenges in miniaturization.
Innovation Solution
The implementation of a semiconductor device package structure with specific conductive and dielectric layers, where the first conductive layer has a smaller pitch than the second and third conductive layers, and a dielectric layer with varying hardness, along with a method of manufacturing involving a carrier and multiple conductive layers to reduce thickness and prevent warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are stacked to one another, then device integration is improved, but wafer warpage occurs due to mismatched coefficients of thermal expansion
Solution Approach 1:
The patent changes the physical parameters of the conductive layers by implementing a multi-layer structure with varying pitches (first pitch < third pitch < second pitch). This parameter variation allows for differential thermal expansion compensation, reducing wafer warpage while maintaining high device integration through the stacked configuration.
Solution Approach 2:
The patent employs a composite interconnection structure consisting of multiple conductive layers with different pitches and properties. This composite approach enables the structure to accommodate thermal expansion mismatches between stacked semiconductor devices and the package body, thereby reducing warpage while achieving high integration.
2Stability of the object's composition
If multiple conductive layers with different pitches are implemented, then wafer warpage is reduced, but device complexity increases
Solution Approach 1:
The patent segments the interconnection structure into multiple conductive layers, each with specific pitch characteristics. The first conductive layer has a first pitch, the second conductive layer has a second pitch, and the third conductive layer has a third pitch, where first pitch < third pitch < second pitch. This segmentation allows each layer to perform specific functions in managing thermal expansion and electrical interconnection, reducing overall warpage while maintaining manageable complexity through functional specialization.
Data Source
AI summary
A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.