Semiconductor Package Interface Treatment for Delamination Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving strong interfacial adhesion between dielectric layers and molding compounds in semiconductor packages, particularly due to residual metal contamination and mechanical strain, which can lead to delamination issues in high-density packaging configurations like Package-on-Package (PoP) technology.
Innovation Solution
A surface treatment process involving plasma treatment to hydroxylate the topmost dielectric layer, followed by a wet etching process to remove residual metal, enhances the adhesion by forming covalent bonds with a nucleophilic molding compound, thereby improving the mechanical strength and reducing delamination risks in regions under high strain.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If residual metal is present on the dielectric layer surface, then manufacturing is simpler, but adhesion strength between dielectric layer and molding compound deteriorates
Solution Approach 1:
The patent applies surface treatment processes (plasma treatment, wet etching, or vapor HF etching) to the dielectric layer surface before bonding the molding compound. This preliminary action removes residual metal and modifies the surface chemistry to enhance adhesion, preventing delamination issues that would occur without this preparatory step.
2Quantity of substance
If Package-on-Package technology is used to increase integration density, then component density improves, but mechanical strain increases leading to delamination
Solution Approach 1:
The patent modifies the surface parameters of the dielectric layer through plasma treatment or chemical etching, changing the surface energy, roughness, and chemical composition. These parameter changes create a more favorable surface for bonding, enabling the molding compound to adhere strongly even under the high mechanical strain conditions of PoP configurations.
3Device complexity
If conventional bonding is used without surface treatment, then process complexity is lower, but delamination risk increases under mechanical strain
Solution Approach 1:
The surface treatment process acts as an intermediary step that modifies the dielectric layer surface to create optimal bonding conditions. This intermediary treatment (plasma, wet etching, or vapor HF etching) prepares the surface by removing contaminants and creating reactive sites, enabling the molding compound to form strong covalent bonds and resist delamination under strain.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution significantly increases the adhesion strength between the dielectric layer and the encapsulant, allowing for more uniform distribution of integrated circuit dies and conductive connectors, reducing the likelihood of delamination and enhancing the input/output (I/O) count in semiconductor packages.
Implementation Method 1
A surface treatment process involving plasma treatment to hydroxylate the topmost dielectric layer
Implementation Method 2
plasma treatment to hydroxylate the topmost dielectric layer, followed by a wet etching process
Implementation Method 3
followed by a wet etching process to remove residual metal
Data Source
AI summary
In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.