Package Structure with Integrated Passive Devices

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Solution Overview

Problem

The semiconductor industry faces challenges in achieving smaller and more creative packaging techniques for semiconductor dies, particularly in Package-on-Package (PoP) technology, where the integration of passive devices within the package structure affects the height and reliability of the package, leading to issues with board-level joint yield and process window.

Innovation Solution

The solution involves forming a package structure with integrated passive devices (IPDs) bonded to redistribution layers (RDLs) without under bump metallization (UBM) under the IPD joint area, using laser drilling or photolithography to expose conductive layers, and employing full-fill, partial-fill, or no-fill underfill methods to improve reliability and reduce the IPD component height, thereby enlarging the process window.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If integrated passive devices (IPDs) are bonded to redistribution layers with under bump metallization (UBM), then bonding strength is improved, but total height of the IPD component increases

Engineering Contradiction:
Improvebonding strengthVSAvoidtotal height of IPD component
Core Design Contradiction:
StrengthVSLength of stationary object

Solution Approach 1:

The patent removes the under bump metallization (UBM) layer from beneath the IPD bonding joint area, extracting only the necessary bonding functionality to the RDL itself. This extraction reduces the total height of the IPD component while maintaining bonding strength through direct bonding to the conductive RDL structure.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent transitions from a vertical stacking approach with multiple layers (substrate, UBM, IPD) to a more integrated configuration where the RDL serves multiple functions. By using the RDL as both the conductive interconnect and the bonding substrate, the design reduces vertical dimensionality while maintaining horizontal functionality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Length of stationary object

If integrated passive devices (IPDs) are bonded to redistribution layers without under bump metallization (UBM), then total height of the IPD component is reduced, but bonding reliability may deteriorate

Engineering Contradiction:
Improvetotal height of IPD componentVSAvoidbonding reliability
Core Design Contradiction:
Length of stationary objectVSReliability

Solution Approach 1:

The redistribution layer (RDL) is designed to serve multiple functions simultaneously: it provides electrical interconnection, acts as the bonding substrate for IPDs, and maintains structural integrity. This multi-functionality eliminates the need for separate UBM layers while preserving bonding reliability through the RDL's inherent conductive and mechanical properties.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent modifies the bonding interface parameters by changing from a multi-layer UBM structure to a direct RDL bonding interface. This parameter change optimizes the bonding characteristics for the specific application, achieving reliable bonds with reduced height by adjusting the bonding surface properties and composition of the RDL.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If conventional packaging techniques are used, then manufacturing process is simple, but integration density and component footprint are limited

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidcomponent footprint
Core Design Contradiction:
Ease of manufactureVSArea of moving object

Solution Approach 1:

The patent merges the passive devices (IPDs) directly into the package structure with the RDLs, eliminating the need for separate external passive components. This integration combines multiple functions into a single compact structure, reducing the overall component footprint while maintaining manufacturability through established bonding and deposition processes.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The IPDs are nested within the package structure, positioned in proximity to or integrated with the RDL layers. This nesting approach allows passive devices to be housed within the same vertical and horizontal space as the active circuitry, maximizing integration density without significantly complicating the manufacturing process.

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces the total height of the IPD component, enhances system performance, and increases the process window, improving the reliability and yield of the package structure by allowing for higher integration density and smaller footprints on printed circuit boards.

Implementation Method 1

using laser drilling or photolithography to expose conductive layers

Methodology Applied
Scientific EffectLaser ablation: Laser Ablation

Implementation Method 2

using laser drilling or photolithography to expose conductive layers

Methodology Applied
Scientific EffectPhotolithography: Photopolymerisation

Data Source

PatentUS10950575B2Package structure and method of forming the same
Publication Date: 2021.03.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10950575B2 patent drawing
  • US10950575B2 patent drawing
  • US10950575B2 patent drawing

AI summary

An embodiment is a structure including a first die, a molding compound at least laterally encapsulating the first die, a first redistribution structure including metallization patterns extending over the first die and the molding compound, a first conductive connector comprising a solder ball and an under bump metallization coupled to the first redistribution structure, and an integrated passive device bonded to a first metallization pattern in the first redistribution structure with a micro bump bonding joint, the integrated passive device being adjacent the first conductive connector.