Semiconductor Package Laser Reflow for Low-Warpage PoP Bonding

The patent segments the heating process into multiple discrete laser shots rather than continuous indirect heating. Each laser shot is a separate, localized heating event that bonds specific regions independently, allowing precise control over thermal input and preventing cumulative warpage effects.

The patent applies localized heating through laser shots that target specific regions of the semiconductor package. By concentrating thermal energy only where bonding is needed rather than heating the entire wafer, the process achieves effective bonding while minimizing overall thermal stress and warpage.

The patent applies partial heating by using multiple laser shots that collectively cover the bonding area rather than attempting to heat the entire region uniformly in one pass. This partial action approach achieves sufficient bonding precision in each localized area while distributing thermal stress to minimize warpage.

The patent controls warpage by adjusting laser parameters such as power, pulse duration, and shot spacing. By optimizing these parameters, the process achieves precise bonding in each localized area while managing thermal input to prevent excessive warpage.

The patent uses a single laser system that performs multiple bonding functions by moving to different positions and firing shots at different regions. This multi-functional approach achieves comprehensive bonding coverage without requiring multiple separate heating devices or complex tooling.

The patent extends the bonding process into the temporal dimension by using sequential laser shots rather than simultaneous heating. This dimensional approach allows comprehensive coverage of multiple regions while maintaining a relatively simple single-laser system, as the complexity is managed through time-sequenced operations rather than spatial multiplicity.