Semiconductor Package Marking for Transparent Insulating Layers
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Solution Overview
Problem
Existing semiconductor package marking methods struggle to enhance the visibility of marking patterns, particularly when using transparent or translucent photoimageable dielectric materials, as the visibility of the patterns is obscured by the underlying wiring layers.
Innovation Solution
The implementation of a semiconductor package design featuring a discolored area formed through laser annealing on the outermost insulating layer, which includes a marking pattern with step portions, allowing for improved contrast and visibility by reducing the transparency of the insulating layer and thus enhancing the visibility of the marking pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a transparent or translucent insulating layer is used, then the aesthetic appearance and light transmission are improved, but the visibility of the marking pattern is worsened due to obscuration by underlying wiring layers
Solution Approach 1:
The insulating layer is divided into two regions with different optical properties: a first region that is transparent or translucent for aesthetic appearance, and a second region that is opaque or less transparent specifically at the marking pattern location to ensure visibility. This local differentiation allows each region to fulfill its specific function without compromising the overall design.
Solution Approach 2:
The insulating layer is segmented into multiple functional zones: the first region maintains transparency for light transmission, while the second region provides opacity for marking visibility. The marking pattern itself is segmented into step portions that create optical contrast. This segmentation allows the system to simultaneously achieve both light transmission and marking visibility.
2Loss of information
If the insulating layer transparency is reduced to improve marking visibility, then the marking pattern becomes more visible, but the light transmission and aesthetic appearance are worsened
Solution Approach 1:
Instead of reducing transparency uniformly across the entire insulating layer, the invention applies opacity reduction only locally at the marking pattern location (second region). The first region maintains its transparent or translucent properties for optimal light transmission. This localized approach resolves the contradiction by sacrificing transparency only where necessary for marking visibility.
3Loss of information
If a marking pattern is engraved on a transparent insulating layer, then the marking information can be provided, but the contrast and visibility are insufficient due to the transparency of the material
Solution Approach 1:
The invention introduces optical contrast by creating a second region with different transparency characteristics. The marking pattern includes step portions that utilize this contrast between the transparent first region and the opaque/less transparent second region. This color/transparency differentiation significantly enhances the visibility and contrast of the marking information.
Solution Approach 2:
The marking pattern is designed with step portions that create three-dimensional depth variations. These step portions interact with the two-region insulating layer structure to produce optical contrast through multiple dimensions: the height difference of steps combined with the transparency difference between regions creates enhanced visual contrast for improved marking visibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves the visibility of the marking patterns by creating a clear contrast between the discolored area and the surrounding regions, ensuring that the marking information is easily recognizable, even when embedded within a transparent or translucent insulating layer.
Implementation Method 1
forming a discolored area by performing a laser annealing process on a surface of an outermost second insulating layer
Implementation Method 2
forming a discolored area by performing a laser annealing process on a surface of an outermost second insulating layer
Implementation Method 3
forming a marking pattern including a step portion by performing a laser marking process on a surface of the outermost second insulating layer within the discolored area
Data Source
AI summary
A semiconductor package includes a first semiconductor chip; an encapsulant covering at least a portion of the first semiconductor chip; insulating layers provided on the encapsulant, each of the insulating layers being transparent or translucent; and wiring layers provided on the encapsulant, the wiring layers being partially covered by the insulating layers, wherein an outermost insulating layer of the insulating layers comprises a first region and a second region, a color of the first region is different from a color of the second region, the second region surrounds the first region, and at least one marking pattern comprising at least one step portion is provided in the first region of the outermost insulating layer.